Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (6): 067701    DOI: 10.1088/1674-1056/23/6/067701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
Lin Meng, An Xia, Li Ming, Yun Quan-Xin, Li Min, Li Zhi-Qiang, Liu Peng-Qiang, Zhang Xing, Huang Ru
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China

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