Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (6): 068801    DOI: 10.1088/1674-1056/23/6/068801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
Yang Jinga, Zhao De-Ganga, Jiang De-Shenga, Liu Zong-Shuna, Chen Pinga, Li Lianga, Wu Liang-Lianga, Le Ling-Conga, Li Xiao-Jinga, He Xiao-Guangb, Wang Huib, Zhu Jian-Junb, Zhang Shu-Mingb, Zhang Bao-Shunb, Yang Huia b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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