Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (6): 067101    DOI: 10.1088/1674-1056/23/6/067101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
Hu Sheng-Donga b, Wu Xing-Hea, Zhu Zhia, Jin Jing-Jinga, Chen Yin-Huia
a College of Communication Engineering, Chongqing University, Chongqing 400044, China;
b National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electrics Technology Group Corporation, Chongqing 400044, China

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