Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

doi:10.1088/1674-1056/23/5/057304

Abstract The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

Keywords: negative bias temperature instability (NBTI) reaction-diffusion model interface traps power MOSFET

Received: 20 August 2013
Revised: 26 November 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

Corresponding Authors: Zhang Yue
E-mail: zhangy@mail.xidian.edu.cn

About author: 73.40.Qv; 85.30.De

Cite this article:

Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET 2014 Chin. Phys. B 23 057304

[1]	Islam A E, Kufluoglu H, Varghese D, Mahapatra S and Alam M A 2007 IEEE Trans. Electron. Dev. 54 2143
[2]	Huard V, Denais M and Parthasarathy C 2006 Microelectron. Reliab. 46 1
[3]	Schroder D K and Babcock J A 2003 J. Appl. Phys. 94 1
[4]	Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam A E and Alam M A 2013 IEEE Trans. Electron. Dev. 60 901
[5]	Alam M A, Kufluoglu H, Varghese D and Mahapatra S 2007 Microelectron. Reliab. 47 853
[6]	Grasser T, Kaczer B, Goes W, Reisinger H, Aichinger T, Hehenberger P, Wagner P J, Schanovsky F, Franco J, Roussel P and Nelhiebel M 2010 Proceedings of IEEE International Electron Devices Meeting, December 6-8, 2010 San Francisco, USA, p. 82
[7]	Ma X H, Cao Y R and Hao Y 2010 Chin. Phys. B 19 117308
[8]	Zhang Y, Pu S, Lei X Y, Chen Q, Ma X H and Hao Y 2013 Chin. Phys. B 22 117311
[9]	Cao Y R, Ma X H, Hao Y and Tian W C 2010 Chin. Phys. B 19 097306
[10]	Stojadinović N, Danković D, Djorić Veljković S, Davidović V, Manić I and Golubović S 2005 Microelectron. Reliab. 45 1343
[11]	Danković D, Manić I, Djorić-Veljković S, Davidović V, Golubović S and Stojadinović N 2006 Microelectron. Reliab. 46 1828
[12]	Danković D, Manić I, Djorić-Veljković S, Golubović S and Stojadinović N 2008 Proceedings of the 26th International Conference on Microelectronics, May 11-14, 2008 Niš, Serbia, p. 599
[13]	Bhardwaj S, Wang W, Vattikonda R, Cao Y and Vrudhula S 2008 IET Circuit Devices Syst. 2 361
[14]	Alam M A and Mahapatra S 2005 Microelectron. Reliab. 45 71
[15]	Ogawa S and Shiono N 1995 Phys. Rev. B 51 4218
[16]	Kufluoglu H and Alam M A 2006 IEEE Trans. Electron. Dev. 53 1120

[1]	Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Chin. Phys. B, 2021, 30(7): 077303.
[2]	Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯). Chin. Phys. B, 2020, 29(9): 097301.
[3]	High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯). Chin. Phys. B, 2020, 29(3): 037301.
[4]	Interface and border trapping effects in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃). Chin. Phys. B, 2020, 29(10): 107302.
[5]	Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(6): 067304.
[6]	Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏). Chin. Phys. B, 2017, 26(3): 037104.
[7]	Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚). Chin. Phys. B, 2017, 26(10): 108503.
[8]	Recovery of PMOSFET NBTI under different conditions Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(9): 097304.
[9]	Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress Cao Yan-Rong (曹艳荣), He Wen-Long (何文龙), Cao Cheng (曹成), Yang Yi (杨毅), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(11): 117303.
[10]	An oxide filled extended trench gate super junction MOSFET structure Wang Cai-Lin(王彩琳) and Sun Jun(孙军). Chin. Phys. B, 2009, 18(3): 1231-1236.
[11]	Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) . Chin. Phys. B, 2009, 18(12): 5479-5484.
[12]	Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors Cao Yan-Rong(曹艳荣), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Hu Shi-Gang(胡仕刚). Chin. Phys. B, 2009, 18(1): 309-314.
[13]	Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs) Liu Hong-Xia (刘红侠) and Hao Yue (郝跃). Chin. Phys. B, 2007, 16(7): 2111-2115.
[14]	Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃). Chin. Phys. B, 2007, 16(5): 1445-1449.
[15]	The role of hydrogen in negative bias temperature instability of pMOSFET Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃). Chin. Phys. B, 2006, 15(4): 833-838.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Cite this article:

Online attention