Effect of additional silicon on titanium/4H-SiC contacts properties

doi:10.1088/1674-1056/23/5/057303

Abstract The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.

Keywords: Ti/4H-SiC ohmic contact surface morphology additional silicon

Received: 09 October 2013
Revised: 23 December 2013
Accepted manuscript online:

PACS:	73.40.Cg	(Contact resistance, contact potential)
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

Corresponding Authors: Chen Zhi-Zhan
E-mail: chenwbgs@126.com

About author: 73.40.Cg; 68.55.-a

Cite this article:

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟) Effect of additional silicon on titanium/4H-SiC contacts properties 2014 Chin. Phys. B 23 057303

[1]	Vix-Guterl C, Alix I, Gibot P and Ehrburger P 2003 Appl. Surf. Sci. 329 1639
[2]	Katsuno T, Watanabe Y, Fujiwara H, Konishi M, Naruoka H, Morimoto J, Morino T and Endo T 2011 Appl. Phys. Lett. 98 222111
[3]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[4]	Guo H, Zhang Y M, Qiao D Y, Sun L and Zhang Y M 2007 Chin. Phys. 16 1753
[5]	Yang H, Peng T H, Wang W J, Zhang D F and Chen X L 2007 Appl. Surf. Sci. 254 527
[6]	Yang H, Peng T H, Wang W J, Wang W Y and Chen X L 2008 Appl. Surf. Sci. 255 3121
[7]	Goesmann F and Schmid-Fetzer R 1995 Semicond. Technol. 10 1652
[8]	Goesmann F and Schmid-Fetzer R 1997 Mater. Sci. Eng. B 46 357
[9]	Guo H, Zhang Y M and Zhang Y M 2006 Chin. Phys. 15 2142
[10]	Xu M S, Hua X B, Peng Y, Yang K, Xia W, Yu G J and Xu X G 2013 J. Alloys Compd. 550 46
[11]	Buchholt K, Ghandi R, Domeij M, Zetterling C M, Lu J, Eklund P, Hultman L and Spetz A L 2011 Appl. Phys. Lett. 98 042108
[12]	Wang Z, Tsukimoto S, Saito M, Ito K, Murakami M and Ikuhara Y 2009 Phys. Rev. B 80 245303
[13]	Drevin-Bazin A, Barbot J F, Alkazaz M, Cabioch T and Beaufort M F 2012 Appl. Phys. Lett. 101 021606
[14]	Stoltz S E, Starnberg H I and Barsoum M W 2003 J. Phys. Chem. Solids. 64 2321
[15]	Mohney S E, Hull B A, Lin J Y and Crofton J 2002 Solid State Electron. 46 689
[16]	Via F L, Roccaforte F, Makhtari A, Raineri V, Musumeci P and Calcagno L 2002 Microelectronic Engineering 60 269
[17]	Reeves G K and Harrison H B 1982 IEEE Electron Device 3 111
[18]	Lee S H, Park H and Paine D C 2011 J. Appl. Phys. 109 063702
[19]	Tsukimoto S, Nitta K, Sakai T, Moriyama M and Murakami M 2004 J. Electron Mater. 33 460
[20]	Frazzetto A, Giannazzo F, Nigro R L, Raineri V and Roccaforte F 2011 J. Phys. D: Appl. Phys. 44 255302
[21]	Alami J, Eklund P, Emmerlich J, Wilhelmsson O, Jansson U, Högberg H, Hultman L and Helmersson U 2006 Thin Solid Films 515 1731
[22]	Johansson L I and Virojanadara C 2011 Phys. Status Solidi B 3 667
[23]	Waldrop J R and Grant R W 1993 Appl. Phys. Lett. 62 2685
[24]	Kooi B J, Kabel M, Kloosterman A B and Hosson J T M D 1999 Acta Mater. 47 3105
[25]	Tong Q Y, Gutjahr K, Hopfe S, GOsele U and Lee T H 1997 Appl. Phys. Lett. 70 1390
[26]	Kim D W and Baik H K 2000 Appl. Phys. Lett. 77 1011
[27]	Michaelson H B 1997 J. Appl. Phys. 48 4729
[28]	Luo B, Ren F, Fitch R C, Gillespie J K, Jenkins T, Sewell J, Via D, Crespo A, Baca A G, Briggs R D, Gotthold D, Birkhahn R, Peres B and Pearton S J 2003 Appl. Phys. Lett. 82 3910
[29]	Radhakrishnan G, Adams P M and Speckman D M 2000 Thin Solid Films 358 131
[30]	Lan Y L, Lin H C, Liu H H, Lee G Y, Ren F, Pearton S J, Chang M N and Chyi J I 2009 Appl. Phys. Lett. 94 243502
[31]	Aboelfotoh M O and Tu K N 1986 Phys. Rev. B 34 2311
[32]	Teraji T, Hara S, Okushi H and Kajimura K 1997 Appl. Phys. Lett. 71 689
[33]	Pécz B, Tóth L, di Forte-Poisson M A and Vacas J 2003 Appl. Surf. Sci. 206 8

[1]	Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2]	Surface structure modification of ReSe₂ nanosheets via carbon ion irradiation Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Chin. Phys. B, 2023, 32(2): 026101.
[3]	Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Chin. Phys. B, 2021, 30(9): 097302.
[4]	Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Chin. Phys. B, 2021, 30(9): 096803.
[5]	Influence of N⁺ implantation on structure, morphology, and corrosion behavior of Al in NaCl solution Hadi Savaloni, Rezvan Karami, Helma Sadat Bahari, Fateme Abdi. Chin. Phys. B, 2020, 29(5): 058102.
[6]	Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成). Chin. Phys. B, 2020, 29(3): 038102.
[7]	Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况). Chin. Phys. B, 2019, 28(3): 037302.
[8]	Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平). Chin. Phys. B, 2017, 26(3): 037201.
[9]	Analysis of the induction of the myelin basic protein binding to the plasma membrane phospholipid monolayer Lei Zhang(张蕾), Changchun Hao(郝长春), Ying Feng(冯盈), Feng Gao(高峰), Xiaolong Lu(逯晓龙), Junhua Li(李俊花), Runguang Sun(孙润广). Chin. Phys. B, 2016, 25(9): 090507.
[10]	Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Zhang Li-Qun (张立群), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉). Chin. Phys. B, 2015, 24(9): 096804.
[11]	Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots Alireza Samavati, Z. Othaman, S. K. Ghoshal, M. K. Mustafa. Chin. Phys. B, 2015, 24(2): 028103.
[12]	Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC Zhou Tian-Yu (周天宇), Liu Xue-Chao (刘学超), Huang Wei (黄维), Zhuo Shi-Yi (卓世异), Zheng Yan-Qing (郑燕青), Shi Er-Wei (施尔畏). Chin. Phys. B, 2015, 24(12): 126801.
[13]	Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光). Chin. Phys. B, 2015, 24(11): 116803.
[14]	Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface Han Chao (韩超), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Guo Hui (郭辉), Wang Yue-Hu (王悦湖). Chin. Phys. B, 2015, 24(11): 117304.
[15]	Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts Cheng Yue (程越), Zhao Gao-Jie (赵高杰), Liu Yi-Hong (刘益宏), Sun Yu-Jun (孙玉俊), Wang Tao (王涛), Chen Zhi-Zhan (陈之战). Chin. Phys. B, 2015, 24(10): 107303.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effect of additional silicon on titanium/4H-SiC contacts properties

Cite this article:

Online attention