Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

doi:10.1088/1674-1056/23/5/057301

Abstract Frequency dependent conductance measurements are implemented to investigate the interface states in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density D_it, trap time constant τ_it, and trap state energy E_T in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al₂O₃/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

Keywords: Al₂O₃/AlGaN/GaN interface trap states conductance capacitance

Received: 25 April 2013
Revised: 23 October 2013
Accepted manuscript online:

PACS:	73.20.-r	(Electron states at surfaces and interfaces)
	73.20.At	(Surface states, band structure, electron density of states)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

Corresponding Authors: Liao Xue-Yang
E-mail: vicki_216@163.com

About author: 73.20.-r; 73.20.At; 73.40.Kp; 73.40.Qv

Cite this article:

Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) Interface states in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique 2014 Chin. Phys. B 23 057301

[1]	Huang L H and Lee C T 2007 J. Electrochem. Soc. 154 H862
[2]	Ostermaier C, Lee H C, Hyun S Y, Ahn S I, Kim K W, Cho H I, Ha J B and Lee J H 2008 Phys. Stat. Solid C 5 1992
[3]	Freedsman J J, Kubo T, Selvaraj S L and Egawa T 2011 Jpn. J. Appl. Phys. 50 04DF03
[4]	Yue Y Z, Hao Y and Zhang J C 2008 Chin. Phys. B 17 140505
[5]	Bi Z W, Feng Q and Hao Y 2010 Chin. Phys. B 19 077303
[6]	Wang Z G, Chen Y F and Chen C 2010 Chin. Phys. B 19 107305
[7]	Okino T, Ochiai M, Ohno Y, Kishimoto S, Maezawa K and Mizutani T 2004 IEEE Electron Device Lett. 25 523
[8]	Miller E J, Dang X Z and Wieder H H 2000 J. Appl. Phys. 87 8070
[9]	Quan S, Hao Y and Ma X H 2011 Chin. Phys. B 20 018101
[10]	Shih H, Kudo M and Suzuki T 2012 Appl. Phys. Lett. 101 043501
[11]	Chu R M, Zhou Y G, Chen K J and Lau K M 2003 Phys. Stat. Sol. 07 2400
[12]	Sze S M and Kwok K N 2008 Physics of Semiconductor Devices (3rd edn.) (Xi'an: Xi'an Jiaotong University Press)
[13]	Nicollian E H and J R Brews 1982 MOS Physics and Technology (New York: Wiley)
[14]	Gregušová D, Stoklas R and Mizue Ch 2010 J. Appl. Phys. 107 106104
[15]	Freedsman J J, Kubo T and Egawa T 2011 Appl. Phys. Lett. 99 033504
[16]	Kordoš P, Stoklas R and Gregušová D, Gaži Š and Novák J 2010 Appl. Phys. Lett. 96 013505

[1]	High performance carrier stored trench bipolar transistor with dual shielding structure Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波). Chin. Phys. B, 2023, 32(3): 038501.
[2]	Hall conductance of a non-Hermitian two-band system with k-dependent decay rates Junjie Wang(王俊杰), Fude Li(李福德), and Xuexi Yi(衣学喜). Chin. Phys. B, 2023, 32(2): 020305.
[3]	High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). Chin. Phys. B, 2023, 32(1): 017305.
[4]	Impact of thermostat on interfacial thermal conductance prediction from non-equilibrium molecular dynamics simulations Song Hu(胡松), C Y Zhao(赵长颖), and Xiaokun Gu(顾骁坤). Chin. Phys. B, 2022, 31(5): 056301.
[5]	MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation Bing Zhang(张冰), Congzhen Hu(胡从振), Youze Xin(辛有泽), Yaoxin Li(李垚鑫), Zhuoqi Guo(郭卓奇), Zhongming Xue(薛仲明), Li Dong(董力), Shanzhe Yu(于善哲), Xiaofei Wang(王晓飞), Shuyu Lei(雷述宇), and Li Geng(耿莉). Chin. Phys. B, 2022, 31(5): 058503.
[6]	Solid-gas interface thermal conductance for the thermal barrier coating with surface roughness: The confinement effect Xue Zhao(赵雪) and Jin-Wu Jiang(江进武). Chin. Phys. B, 2022, 31(12): 126802.
[7]	Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Chin. Phys. B, 2022, 31(1): 017701.
[8]	Accurate capacitance-voltage characterization of organic thin films with current injection Ming Chu(褚明), Shao-Bo Liu(刘少博), An-Ran Yu(蔚安然), Hao-Miao Yu(于浩淼), Jia-Jun Qin(秦佳俊), Rui-Chen Yi(衣睿宸), Yuan Pei(裴远), Chun-Qin Zhu(朱春琴), Guang-Rui Zhu(朱光瑞), Qi Zeng(曾琪), and Xiao-Yuan Hou(侯晓远). Chin. Phys. B, 2021, 30(8): 087301.
[9]	Suppression of leakage effect of Majorana bound states in the T-shaped quantum-dot structure Wei-Jiang Gong(公卫江), Yu-Hang Xue(薛宇航), Xiao-Qi Wang(王晓琦), Lian-Lian Zhang(张莲莲), and Guang-Yu Yi(易光宇). Chin. Phys. B, 2021, 30(7): 077307.
[10]	Enhanced interface properties of diamond MOSFETs with Al₂O₃ gate dielectric deposited via ALD at a high temperature Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭). Chin. Phys. B, 2021, 30(5): 058101.
[11]	Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO₂ ferroelectric capacitors Yuan-Yuan Zhang(张元元), Xiao-Qing Sun(孙晓清), Jun-Shuai Chai(柴俊帅), Hao Xu(徐昊), Xue-Li Ma(马雪丽), Jin-Juan Xiang(项金娟), Kai Han(韩锴), Xiao-Lei Wang(王晓磊), and Wen-Wu Wang(王文武). Chin. Phys. B, 2021, 30(12): 127701.
[12]	Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇). Chin. Phys. B, 2021, 30(10): 107801.
[13]	Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(1): 018501.
[14]	Electrostatic switch of magnetic core-shell in 0-3 type LSMO/PZT composite film Bo Chen(陈波), Zi-Run Li(李滋润), Chuan-Fu Huang(黄传甫), Yong-Mei Zhang(张永梅). Chin. Phys. B, 2020, 29(9): 097702.
[15]	Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2019, 28(10): 107301.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Cite this article:

Online attention

Interface states in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique