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Chin. Phys. B, 2014, Vol. 23(4): 047104    DOI: 10.1088/1674-1056/23/4/047104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption

Deng Jin-Xiang (邓金祥), Chen Liang (陈亮), Man Chao (满超), Kong Le (孔乐), Cui Min (崔敏), Gao Xue-Fei (高学飞)
School of Applied Mathematics and Physics, Beijing University of Technology, Beijing 100124, China
Abstract  Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency (RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film.
Keywords:  hexagonal boron nitride thin film      silver nanoparticles      surface enhanced infrared absorption  
Received:  07 July 2013      Revised:  17 September 2013      Accepted manuscript online: 
PACS:  71.55.Eq (III-V semiconductors)  
Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4072007) and the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007).
Corresponding Authors:  Deng Jin-Xiang     E-mail:  jdeng@bjut.edu.cn
About author:  71.55.Eq

Cite this article: 

Deng Jin-Xiang (邓金祥), Chen Liang (陈亮), Man Chao (满超), Kong Le (孔乐), Cui Min (崔敏), Gao Xue-Fei (高学飞) Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption 2014 Chin. Phys. B 23 047104

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