Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

doi:10.1088/1674-1056/23/3/038503

Abstract A novel low specific on-resistance (R_on,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce R_on,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and R_on,sp of 8.08 mΩ·cm² which increases BV by 35% and reduces R_on,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.

Keywords: multiple-direction assisted depletion effect breakdown voltage (BV) electric field modulation lateral double-diffusion MOSFET (LDMOS)

Received: 23 May 2013
Revised: 06 August 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	84.70.+p	(High-current and high-voltage technology: power systems; power transmission lines and cables)

Fund: Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

Corresponding Authors: Wu Wei
E-mail: wuweiwwu@163.com

Cite this article:

Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer 2014 Chin. Phys. B 23 038503

[1]	Souza M M D and Narayanan E M S 1996 Electron. Lett. 32 1092
[2]	Disney D R, Paul A K, Darwish M, Basecki R and Rumennik V 2001 Proc. ISPSD 399
[3]	Hardikar S, Tadikonda R, Green D W, Vershinin K V and Narayanan E M S 2004 IEEE Trans. Electron Dev. 51 808
[4]	Luo X R, Yao G L, Chen X, Wang Q, Ge R and Florin U 2011 Chin. Phys. B 20 028501
[5]	Chen X B, Mawby P A and Salama T 1998 J. Microelectron. 29 1005
[6]	Udrea F, Popescu A and Miline W I 1998 IEEE Electron. Lett. 34 808
[7]	Duan B X, Yang Y T and Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[8]	Zhang B, Wang W L, Chen W J, Li Z H and Li Z J 2009 IEEE Electron Dev. Lett. 30 849
[9]	Wu W, Zhang B, Fang J, Luo X R and Li Z J 2013 Chin. Phys. B 22 068501
[10]	Chen W J, Zhang B and Li Z J 2007 Semicond. Sci. Technol. 22 464
[11]	Park I Y and Salama T 2006 IEEE Trans. Electron Dev. 53 1909
[12]	Nassif-Khalil S G, Hou L Z and Salama T 2004 IEEE Trans. Electron Dev. 51 1185
[13]	Appels J A and Vaes J 1979 IEDM 238
[14]	TCAD Sentaurus Manuals 2010 (Version D-2010.03)
[15]	Amato M and Rumennik V 1985 IEDM 736

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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

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