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Chin. Phys. B, 2014, Vol. 23(3): 037201    DOI: 10.1088/1674-1056/23/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

Yang Hang-Sheng (杨杭生)a, Jin Pan-Pan (金盼盼)a, Xu Ya-Bo (徐亚伯)b, Li Hai-Yang (李海洋)b
a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
b Department of Physics, Zhejiang University, Hangzhou 310027, China
Abstract  Theoretical and experimental investigations on the dependence of the intensity of infrared (IR) absorption of polycrystalline cubic boron nitride thin films under the residual compressive stress conditions have been performed. Our results indicate that the intensity of the IR absorption is proportional to the total degree of freedom of all the ions in the ordered regions. The reduction of interstitial Ar atom concentration, which causes the increase in the ordered regions of cubic boron nitride (cBN) crystallites, could be one cause for the increase in the intensity of IR absorption after residual compressive stress relaxation. Theoretical derivation is in good agreement with the experimental results concerning the IR absorption intensity and the Ar interstitial atom concentration in cubic boron nitride films measured by energy dispersion X-ray spectroscopy. Our results also suggest that the interstitial Ar is the origin of residual compressive stress accumulation in plasma enhanced cBN film deposition.
Keywords:  infrared absorption      compressive stress      degree of freedom      interstitial atom  
Received:  07 May 2013      Revised:  21 August 2013      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  32.30Bv  
  61.77.jj  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50772096 and 61176051).
Corresponding Authors:  Yang Hang-Sheng     E-mail:  hsyang@zju.edu.cn

Cite this article: 

Yang Hang-Sheng (杨杭生), Jin Pan-Pan (金盼盼), Xu Ya-Bo (徐亚伯), Li Hai-Yang (李海洋) Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition 2014 Chin. Phys. B 23 037201

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