Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

doi:10.1088/1674-1056/23/3/038403

Abstract High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3×10^-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.

Keywords: AlGaN/GaN HEMTs low-leakage current metal organic chemical vapor deposition Mg-doped buffer layer

Received: 23 August 2013
Revised: 17 September 2013
Accepted manuscript online:

PACS:	84.30.Jc	(Power electronics; power supply circuits)
	85.30.-z	(Semiconductor devices)
	85.30.Tv	(Field effect devices)

Corresponding Authors: Li Ming
E-mail: eeliming@sina.com

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Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition 2014 Chin. Phys. B 23 038403

[1]	Uemoto Y, Shibata D, Yanagihara M, Ishida H, Matsuo H, Nagai S, Batta N, Li M, Ueda T, Tanaka T and Ueda D 2007 IEDM Tech. Digest. 861
[2]	Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P 2004 IEEE Electron Device Lett. 25 117
[3]	Vertiatchikh A V and Eastman L F 2003 IEEE Electron Device Lett. 24 535
[4]	Shi L, Feng S W, Guo C S, Zhu H and Wan N 2013 Chin. Phys. B 22 027201
[5]	Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanon F, Tazzoli A, Meneghini M and Zanoni E 2008 IEEE Trans. Device Mater. Rel. 8 332
[6]	Nariaki I, Jiang L, Kazuo K, Shuusuke K, Kazama T, Kokawa T, Sato Y, Iwami M, Nomura T and Masuda M 2008 High-Density Multi-Fiber Connectors for Optical Interconnection, Furukawa Review 34 17
[7]	Young C C, Ho Y C, Boris P, Michael G S and Lester F E 2006 IEEE Electron Device Lett. 53 2926
[8]	Choi Y, Shi J, Pophristic M, Spencer M and Eastman L 2007 J. Vac. Sci. Technol. A 25 1836
[9]	Cordiera Y, Azizea M, Barona N, Bougrioua Z, Chenot S, Tottereau O, Massies J and Gibart P 2008 J. Cryst. Growth 310 948
[10]	Pan C J and Chi G C 1999 Solid State Electron. 43 621
[11]	Yang Y J, Yen J L, Yang F S and Lin C Y 2000 Jpn. J. Appl. Phys. 39 390
[12]	Yu N, Wang Y, Wang H, Ng K and Lau K 2009 Sci. China Ser. E 52 2758
[13]	Pearton S J, Abernathy C R, Thaler G T, Frazier R, Ren F, Hebard A F, Park Y D, Norton D P, Tang W, Stavola M, Zavada J M and Wilson R G 2003 Physica B 39 340
[14]	Oku T, Kamo Y and Totsuka M 2008 Thin Solid Films 516 545
[15]	Jia S, Dikme Y, Wang D L, Chen K J, Lau K M and Heuken M 2005 IEEE Electron Device Lett. 26 130
[16]	Feng Z H, Cai S J, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 870
[17]	Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars S P and Mishra U K 2004 IEEE Electron Device Lett. 25 1
[18]	Liu J, Zhou Y G, Zhu J, Lau K M and Chen K J 2006 Phys. Stat. Sol. (c) 3 2312
[19]	Song D, Liu J, Cheng Z Q, Tang C W, Lau K M and Chen K J 2007 IEEE Electron Device Lett. 28 189
[20]	Wang M 2011 IEEE Trans. Electron Dev. 58 460

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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

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