Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (3): 038403    DOI: 10.1088/1674-1056/23/3/038403
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Li Ming, Wang Yong, Wong Kai-Ming, Lau Kei-May
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China

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