Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (3): 037302    DOI: 10.1088/1674-1056/23/3/037302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
Wen Hui-Juan, Zhang Jin-Cheng, Lu Xiao-Li, Wang Zhi-Zhe, Ha Wei, Ge Sha-Sha, Cao Rong-Tao, Hao Yue
State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

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