Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

doi:10.1088/1674-1056/23/2/028503

Abstract The influences of polarization and p-region doping concentration on the photocurrent response of Al_0.4Ga_0.6N/Al_0.4Ga_0.6N/Al_0.65Ga_0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.

Keywords: nitride materials photodetector polarization

Received: 20 March 2013
Revised: 03 May 2013
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	77.22.Ej	(Polarization and depolarization)
	74.72.Gh	(Hole-doped)

Fund: Project supported by the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-discipline Foundation.

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

About author: 85.60.Gz; 77.22.Ej; 74.72.Gh

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Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Wu Liang-Liang (吴亮亮), Li Liang (李亮), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes 2014 Chin. Phys. B 23 028503

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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

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