Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (2): 027302    DOI: 10.1088/1674-1056/23/2/027302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
Ma Xiao-Huaa b, Lü Mina b, Pang Leic, Jiang Yuan-Qia b, Yang Jing-Zhia b, Chen Wei-Weia b, Liu Xin-Yuc
a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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