Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (2): 027101    DOI: 10.1088/1674-1056/23/2/027101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü Yuan-Jiea, Feng Zhi-Honga, Lin Zhao-Junb, Gu Guo-Donga, Dun Shao-Boa, Yin Jia-Yuna, Han Ting-Tinga, Cai Shu-Juna
a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

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