Mobility limited by cluster scattering in ternary alloy quantum wires

doi:10.1088/1674-1056/23/1/017305

Abstract The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire (QWR) is theoretically investigated under Born approximation. We calculate the screened mobility due to clusters (high indium composition InGaN) scattering in the In_xGa_1-xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas (1DEG) concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering. Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.

Keywords: mobility cluster scattering quantum wire one-dimensional electron gas

Received: 19 March 2013
Revised: 28 April 2013
Accepted manuscript online:

PACS:	73.50.Dn	(Low-field transport and mobility; piezoresistance)
	73.21.Hb	(Quantum wires)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 61274041, 11275228, 61006004, and 61076001), the National Basic Research Program of China (Grant No. 2012CB619305), and the High Technology R&D Program of China (Grant No. 2011AA03A101).

Corresponding Authors: Yang Shao-Yan
E-mail: sh-yyang@semi.ac.cn

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Zhang Heng (张恒), Yang Shao-Yan (杨少延), Liu Gui-Peng (刘贵鹏), Wang Jian-Xia (王建霞), Jin Dong-Dong (金东东), Li Hui-Jie (李辉杰), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) Mobility limited by cluster scattering in ternary alloy quantum wires 2014 Chin. Phys. B 23 017305

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