Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes

doi:10.1088/1674-1056/22/12/128502

Abstract n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga₂O₃ interlayer are fabricated. The electroluminescence (EL) spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga₂O₃/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga₂O₃/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier (ΔE_C=1.85 eV) at n-ZnO/Ga₂O₃ interface and the much smaller hole barrier (ΔE_V=0.20 eV) at Ga₂O₃/p-GaN interface.

Keywords: light-emitting diodes heterojunction ZnO

Received: 13 February 2013
Revised: 20 May 2013
Accepted manuscript online:

PACS:

85.30.-z

(Semiconductor devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11144010) and the Research Award Fund for Outstanding Middle-aged Young Scientist of Shandong Province, China (Grant No. BS2011ZZ004).

Corresponding Authors: Li Qing-Shan
E-mail: ldulsl@163.com

Cite this article:

Zhang Li-Chun (张立春), Zhao Feng-Zhou (赵风周), Wang Fei-Fei (王菲菲), Li Qing-Shan (李清山) Improvement in electroluminescence performance of n-ZnO/Ga₂O₃/p-GaN heterojunction light-emitting diodes 2013 Chin. Phys. B 22 128502

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Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes

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Improvement in electroluminescence performance of n-ZnO/Ga₂O₃/p-GaN heterojunction light-emitting diodes