Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (11): 118501    DOI: 10.1088/1674-1056/22/11/118501
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Scaling effects of single-event gate rupture in thin oxides
Ding Li-Li, Chen Wei, Guo Hong-Xia, Yan Yi-Hua, Guo Xiao-Qiang, Fan Ru-Yu
Northwest Institute of Nuclear Technology, Xi’an 710024, China

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