Coupling strength effect on shot noise in boron devices

doi:10.1088/1674-1056/22/11/117304

Abstract The shot noise properties in boron devices are investigated with a tight-binding model and the non-equilibrium Green’s function. It is found that the shot noise and Fano factors can be tuned by changing the structures, the size, and the coupling strength. The shot noise is suppressed momentarily as we switch on the bias voltage, and the electron correlation is significant. The Fano factors are more sensitive to the ribbon width than to the ribbon length in the full coupling context. In the weak-coupling context, the Fano factors are almost invariant with the increase of length and width over a wide bias range.

Keywords: shot noise boron devices coupling strength

Received: 18 March 2013
Revised: 22 April 2013
Accepted manuscript online:

PACS:	73.23.-b	(Electronic transport in mesoscopic systems)
	85.35.-p	(Nanoelectronic devices)

Fund: Project supported by the National Basic Research Program of China (Grants Nos. 2011CB921602 and 2011CB606405) and the National Natural Science Foundation of China (Grant Nos. 91221205 and 11174168).

Corresponding Authors: Li Gui-Qin
E-mail: ligqin@mail.tsinghua.edu.cn

Cite this article:

Li Gui-Qin (李桂琴), Guo Yong (郭永) Coupling strength effect on shot noise in boron devices 2013 Chin. Phys. B 22 117304

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