Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

doi:10.1088/1674-1056/22/10/108505

Abstract The efficiency enhancement of an InGaN light-emitting diode (LED) with an AlGaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quantum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable for the injection of holes and confinement of electrons. Additionally, the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.

Keywords: light-emitting diodes AlGaN/InGaN superlattice efficiency droop numerical simulation

Received: 28 December 2012
Revised: 09 April 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	73.61.Ey	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)
	87.15.Aa

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043) and the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

Corresponding Authors: Fan Guang-Han
E-mail: gfan@scnu.edu.cn

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Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer 2013 Chin. Phys. B 22 108505

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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

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