Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

doi:10.1088/1674-1056/22/10/109501

Abstract The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions ¹³²Xe and ²⁰⁹Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis (MUFPSA). In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that (i) with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; (ii) due to the higher ion relative velocity and longer range of δ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.

Keywords: MUFPSA LET MBU ion track structure

Received: 29 January 2013
Revised: 06 March 2013
Accepted manuscript online:

PACS:	95.75.-z	(Observation and data reduction techniques; computer modeling and simulation)
	61.82.Fk	(Semiconductors)
	24.10.Lx	(Monte Carlo simulations (including hadron and parton cascades and string breaking models))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Corresponding Authors: Liu Jie
E-mail: j.liu@impcas.ac.cn

Cite this article:

Geng Chao (耿超), Liu Jie (刘杰), Xi Kai (习凯), Zhang Zhan-Gang (张战刚), Gu Song (古松), Liu Tian-Qi (刘天奇) Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility 2013 Chin. Phys. B 22 109501

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Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

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