Accurate measurement and influence on device reliability of defect density of a light-emitting diode

doi:10.1088/1674-1056/22/10/106108

Abstract A method of accurately measuring the defect density of a high-power light-emitting diode (LED) is proposed. The method is based on measuring the number of emitting photons in the magnitude of 10⁵ under the injection current as weak as nA and calculating the non-radiative recombination coefficient which is related to defect density. Defect density is obtained with the self-developed measurement system, and it is demonstrated that defect density has an important influence on LED optical properties like luminous flux and internal quantum efficiency (IQE). At the same time, a batch of GaN-based LEDs with the chip size of 1 mm×1 mm are selected to conduct the accelerated aging tests lasting for 1000 hours. The results show that defect density exhibits a greater variation and is more sensitive to LED reliability than luminous flux during aging tests. Based on these results, it is concluded that for the GaN-based LED with a chip size of 1mm×1mm, if its defect density is over 10¹⁷/cm³, the LED device performance suffers a serious deterioration, and finally fails.

Keywords: accurate measurement defect density LED reliability

Received: 21 March 2013
Revised: 21 May 2013
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	78.20.Jq	(Electro-optical effects)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the Upgrading Project of Shenzhen Key Laboratory of Information Science and Technology, China (Grant No. CXB20l00525038A), the Shenzhen Science and Technology Development Plan, China (Grant No. 2009003), and the Science and Technology Program of Nanshan District, Shenzhen, China (Grant No. 2011015).

Corresponding Authors: Qian Ke-Yuan
E-mail: qianky@sz.tsinghua.edu

Cite this article:

Guo Zu-Qiang (郭祖强), Qian Ke-Yuan (钱可元) Accurate measurement and influence on device reliability of defect density of a light-emitting diode 2013 Chin. Phys. B 22 106108

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Accurate measurement and influence on device reliability of defect density of a light-emitting diode

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