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Chin. Phys. B, 2013, Vol. 22(10): 106802    DOI: 10.1088/1674-1056/22/10/106802
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

Wang Bo (王波)a b, Su Shi-Chen (宿世臣)a, He Miao (何苗)a, Chen Hong (陈弘)b, Wu Wen-Bo (吴汶波)a, Zhang Wei-Wei (张伟伟)a, Wang Qiao (王巧)a, Chen Yu-Long (陈虞龙)a, Gao You (高优)a, Zhang Li (张力)a, Zhu Ke-Bao (朱克宝)a, Lei Yan (雷严)a
a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for NewEnergy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.
Keywords:  GaN      light-emitting diode (LED)      undercut  
Received:  05 February 2013      Revised:  15 April 2013      Accepted manuscript online: 
PACS:  68.35.B- (Structure of clean surfaces (and surface reconstruction))  
  68.55.-a (Thin film structure and morphology)  
  81.65.Cf (Surface cleaning, etching, patterning)  
  81.40.Rs (Electrical and magnetic properties related to treatment conditions)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science and Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).
Corresponding Authors:  He Miao, Chen Hong     E-mail:  herofate@126.com;hchen@aphy.iphy.ac.cn

Cite this article: 

Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严) Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching 2013 Chin. Phys. B 22 106802

[1] Mukai T and Nakamura S 1999 Jpn. J. Appl. Phys. 38 5736
[2] Anandan M 2008 Journal of The Socity for Information Display 16 287
[3] Huh C, Lee K S, Kang E J and Park S J 2003 J. Appl. Phys. 93 9384
[4] Krames M R 1999 Appl. Phys. Lett. 75 2365
[5] Oder T N, Shakya J, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 83 1232
[6] Oder T N, Kim K H and Lin J Y 2004 Appl. Phys. Lett. 84 467
[7] Yan L J, Sheu J K, Wen W C, Liao T F, Tsai M J and Chang C S 2008 IEEE Photon. Technol. Lett. 20 1725
[8] Choi H W, Dawson M D, Edwards P R and Martin R W 2003 Appl. Phys. Lett. 83 4484
[9] Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Appl. Phys. Lett. 84 856
[10] Yang C C, Horng R H, Lee C E, Lin W Y, Pan K F, Su Y Y and Wuu D S 2005 Jpn. J. Appl. Phys. 44 2525
[11] Chang S J, Wu L W, Su Y K, Hsu Y P and Lee C T 2004 IEEE Photon. Technol. Lett. 16 1447
[12] Gao H Y, Yan F W, Fan Z C, Li J M, Zeng Y P and Wang G H 2008 Chin. Phys. Lett. 25 3448
[13] He A H, Zhang Y, Zhu X H, Chen X W, Fan G H and He M 2010 Chin. Phys. B 19 068101
[14] Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S, Zhang J and Li S Q 2011 Acta Phys. Sin. 60 098107 (in Chinese)
[15] Chang S J, Kuo C H, Su Y K, Wu L W, Sheu J K, Wen T C, Chen J F and Tsai J M 2002 IEEE J. Sel. Topics Quantum Electron. 8 744
[16] Kuo D S, Chang S J, Ko T K, Shen C F, Hon S J and Hung S C 2009 IEEE Photon. Technol. Lett. 21 510
[17] Wong W S, Wengrow A B, Cho Y, Salleo A, Quitoriano N J, Cheung N W and Sands T 1999 J. Electron. Mater. 28 1409
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