Electrostatic field effects on three-dimensional topological insulators

doi:10.1088/1674-1056/22/09/097202

Abstract Three-dimensional topological insulators are a new class of quantum matter which has interesting connections to nearly all main branches of condensed matter physics. In this article, we briefly review the advances in the field effect control of chemical potential in three-dimensional topological insulators. It is essential to the observation of many exotic quantum phenomena predicted to emerge from the topological insulators and their hybrid structures with other materials. We also describe various methods for probing the surface state transport. Some challenges in experimental study of electron transport in topological insulators will also be briefly discussed.

Keywords: topological insulator electron transport weak localization surface and interface

Received: 13 May 2013
Revised: 07 August 2013
Accepted manuscript online:

PACS:	72.15.Rn	(Localization effects (Anderson or weak localization))
	73.25.+i	(Surface conductivity and carrier phenomena)
	03.65.Vf	(Phases: geometric; dynamic or topological)
	71.70.Ej	(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2012CB921703 and 2009CB929101), the National Natural Science Foundation of China (Grant No. 91121003), and the Chinese Academy of Sciences.

Corresponding Authors: Li Yong-Qing
E-mail: yqli@iphy.ac.cn

Cite this article:

Yang Wen-Min (杨雯敏), Lin Chao-Jing (林朝镜), Liao Jian (廖剑), Li Yong-Qing (李永庆) Electrostatic field effects on three-dimensional topological insulators 2013 Chin. Phys. B 22 097202

[1]	Von Klitzing K, Dorda G and Pepper M 1980 Phys. Rev. Lett. 45 494
[2]	König M, Wiedmann S, Brñe C, Roth A, Buhmann H, Molenkamp L W, Qi X L and Zhang S C 2007 Science 318 766
[3]	Chang C Z, Zhang J S, Feng X, Shen J and Xue Q K et al. 2013 Science 340 167
[4]	Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Dietl T, Ohno Y and Ohtani K 2000 Nature 408 944
[5]	Koo H C, Kwon J H, Eom J, Chang J, Han S H and Johnson M 2009 Science 325 1515
[6]	Caviglia A D, Gariglio S, Reyren N, Jaccard D, Schneider T, Gabay M, Thiel S, Hammerl G, Mannhart J and Triscone J M 2008 Nature 456 624
[7]	Li Y Q and Smet J H 2008 Spin Physics in Semiconductors (Springer Berlin: M. I. Dyakonov)
[8]	Fu L, Kane C L and Mele E J 2007 Phys. Rev. Lett. 98 106803
[9]	Moore J E and Balents L 2007 Phys. Rev. B 75 121306
[10]	Roy R 2009 Phys. Rev. B 79 195322
[11]	Fu L and Kane C L 2007 Phys. Rev. B 76 045302
[12]	Hsieh D, Qian D, Wray L, Xia Y, Hor Y S, Cava R J and Hasan M Z 2008 Nature 452 970
[13]	Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
[14]	Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[15]	Fu L and Kane C L 2008 Phys. Rev. Lett. 100 096407
[16]	Garate I and Franz M 2010 Phys. Rev. Lett. 104 146802
[17]	Zhang H J, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nat. Phys. 5 438
[18]	Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009 Nat. Phys. 5 398
[19]	Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang H J, Lu D H, Dai X, Fang Z, Zhang S C, Fisher I R, Hussain Z and Shen Z X 2009 Science 325 178
[20]	Butch N P, Kirshenbaum K, Syers P, Sushkov A B, Jenkins G S, Drew H D and Paglione J 2010 Phys. Rev. B 81 241301
[21]	Analytis J G, Chu J H, Chen Y L, Corredor F, McDonald R D, Shen Z X and Fisher I R 2010 Phys. Rev. B 81 205407
[22]	Kong D S, Cha J J, Lai K J, Peng H, Analytis J G, Meister S, Chen Y L, Zhang H J, Fisher I R, Shen Z X and Cui Y 2011 ACS Nano 5 4698
[23]	Hor Y S, Richardella A, Roushan P, Xia Y, Checkelsky J G, Yazdani A, Hasan M Z, Ong N P and Cava R J 2009 Phys. Rev. B 79 195208
[24]	Analytis J G, McDonald R D, Riggs S C, Chu J H, Boebinger G S and Fisher I R 2010 Nat. Phys. 6 960
[25]	Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2010 Phys. Rev. B 82 241306
[26]	Jia S, Ji H, Climent-Pascual E, Fuccillo M K, Charles M E, Xiong J, Ong N P and Cava R J 2011 Phys. Rev. B 84 235206
[27]	Zhang J S, Chang C Z, Zhang Z C, Wen J, Feng X, Li K, Liu M H, He K, Wang L L, Chen X, Xue Q K, Ma X C andWang Y Y 2011 Nat. Commun. 2 574
[28]	Kong D S, Chen Y L, Cha J J, Zhang Q F, Analytis J G, Lai K J, Liu Z K, Hong S S, Koski K J, Mo S K, Hussain Z, Fisher I R, Shen Z X and Cui Y 2011 Nat. Nanotechnol. 6 705
[29]	Taskin A A, Ren Z, Sasaki S, Segawa K and Ando Y 2011 Phys. Rev. Lett. 107 016801
[30]	Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2012 Phys. Rev. B 85 155301
[31]	Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q and Lu L 2010 Phys. Rev. Lett. 105 176602
[32]	Checkelsky J G, Hor Y S, Cava R J and Ong N P 2011 Phys. Rev. Lett. 106 196801
[33]	Yuan H T, Liu H W, Shimotani H, Guo H, Chen M W, Xue Q K and Iwasa Y 2011 Nano Lett. 11 2601
[34]	Kim D, Cho S, Butch N P, Syers P, Kirshenbaum K, Adam S, Paglione J and Fuhrer M S 2012 Nat. Phys. 8 459
[35]	He X Y, Guan T, Wang X X, Feng B J, Cheng P, Chen L, Li Y Q and Wu K H 2012 Appl. Phys. Lett. 101 123111
[36]	Culcer D 2012 Physica E 44 860
[37]	Bardarson J H and Moore J E 2013 Rep. Prog. Phys. 76 056501
[38]	Ando Y 2013 arXiv: 1304.5693[cond-mat.mtrl-sci]
[39]	Chen C Y, He S L, Weng H M and Zhou X J et al. 2012 Proc. Nat. Acad. Sci. 109 3694
[40]	Wrayer L A, Xu X Y, Xia Y, Hsieh D, Fedorov A V, Hor Y S, Cava R J, Bansil A, Lin H and Hasan M Z 2011 Nat. Phys. 7 32
[41]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[42]	Chen J 2012 Electron Transport Properties of Topological Insulator Tuned with a Back-gate (Ph.D Dissertation) (Beijing: Institute of Physics, Chinese Academy of Sciences) (in Chinese)
[43]	Zhang T, Levy N, Ha J, Kuk Y and Stroscio J A 2013 Phys. Rev. B 87 115410
[44]	Zhang G H, Qin H J, Chen J, He X Y, Lv L, Li Y Q and Wu K H 2011 Adv. Func. Mater. 21 2351
[45]	Nevilla R C, Hoeneisen B and Mead C A 1972 J. Appl. Phys. 43 2124
[46]	Yang W M, Lu Z G and Li Y Q to be published
[47]	Steinberg H, Gardner D R, Lee Y S and Jarillo-Herrero P 2010 Nano Lett. 10 5032
[48]	Sacëpë B, Ostinga J B, Li J, Ubaldini A, Couto N J G, Giannini E and Morpurgo A F 2010 Nat. Commun. 2 575
[49]	Kong D S, Dang W H, Cha J J, Li H, Meister S, Peng H L, Liu Z F and Cui Y 2010 Nano Lett. 10 2245
[50]	Coletti C, Riedl C, Lee D S, Krauss B, Patthey L, von Klitzing K, Smet J H and Starke U 2010 Phys. Rev. B 81 235401
[51]	Cho S, Dellabetta B, Yang A, Schneeloch J, Xu Z J, Valla T, Gu G, Gilbert M J and Mason N 2013 Nat. Commun. 4 1689
[52]	Xiu F, He L A, Wang Y, Cheng L, Chang L T, Lang M, Huang G, Kou X, Zhou Y, Jiang X W, Chen Z Q, Zou J, Shailos A and Wang K L 2011 Nat. Nanotech. 6 216
[53]	Chiu S P and Lin J J 2013 Phys. Rev. B 87 035122
[54]	Cha J J, Kong D S, Hong S S, Analytis J G, Lai K J and Cui Y 2012 Nano Lett. 12 1107
[55]	Gehring P, Gao B, Burghard M and Kern K 2012 Appl. Phys. Lett. 101 023116
[56]	Hong S S, Cha J J, Kong D S and Cui Y 2012 Nat. Commun. 3 757
[57]	Xia B, Ren P, Sulaev A, Liu P, Shen S Q and Wang L 2013 Phys. Rev. B 87 085442
[58]	Lang M, He L, Kou X F, Upadhyaya P, Fan Y, Chu H, Jiang Y, Bardarson J H, Jiang W J, Choi E S, Wang Y, Yeh N C, Moore J and Wang K L 2013 Nano Lett. 13 48
[59]	Lee J, Park J, Lee J H, Kim J S and Lee H J 2012 Phys. Rev. B 86 245321
[60]	Steinberg H, Laloë J B, Fatemi V, Moodera J S and Jarillo-Herrero P 2011 Phys. Rev. B 84 233101
[61]	Liao J et al. to be published
[62]	Wang J, Chen X, Zhu B F and Zhang S C 2012 Phys. Rev. B 85 235131
[63]	Dhoot A S, Yuen J D, Heeney M, McCulloch I, Moses D and Heeger A J 2006 Proc. Natl. Acad. Sci. USA 103 11834
[64]	Panzer M J and Frisbie C D 2006 Adv. Funct. Mater. 16 1051
[65]	Ueno K, Nakamura S, Shimotani H, Ohtomo A, Kimura N, Nojima T, Aoki H, Iwasa Y and Kawasaki M 2008 Nat. Mater. 7 855
[66]	Yuan H T, Liu H W, Shimotani H, Guo H, Chen M, Xue Q K and Iwasa Y 2011 Nano Lett. 11 2601
[67]	Shimizu S, Yoshimi R, Hatano1 T, Takahashi K S, Tsukazaki A, Kawasaki M, Iwasa Y and Tokura Y 2012 Phys. Rev. B 86 045319
[68]	Segawa K, Ren Z, Sasaki S, Tsuda T, Kuwabata S and Ando Y 2012 Phys. Rev. B 86 075306
[69]	Bianchi M, Guan D, Bao S, Mi J, Iversen B B, King P D C and Philip H 2010 Nat. Commun. 1 128
[70]	Hsieh D, Xia Y, Wray L, Qian D, Pal A, Dil J H, Osterwalder J, Meier F, Bihlmayer G, Kane C L, Hor Y S, Cava R J and Hasan M Z 2009 Science 323 919
[71]	Schoenberg D 1984 Magnetic Oscillations in Metals (Cambridge: Cambridge University Press)
[72]	Köhler H 1973 Phys. Stat. Sol. B 58 91
[73]	Taskin A A, Segawa K and Ando Y 2010 Phys. Rev. B 82 121302
[74]	Qu D X, Hor Y S, Xiong J, Cava R J and Ong N P 2010 Science 329 821
[75]	Analytis J G, McDonald R D, Riggs S C, Chu J H, Boebinger G S and Fisher I R 2010 Nat. Phys. 6 960
[76]	Mikitik G P and Sharlai Y V 1999 Phys. Rev. Lett. 82 2147
[77]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[78]	Zhang S Y, Tan W, Stormer H L and Kim P 2005 Nature 438 201
[79]	Xiong J, Luo Y K, Khool Y, Cava R J and Ong N P 2012 Phys. Rev. B 86 045314
[80]	Wright A R and McKenzie R H 2013 Phys. Rev. B 87 085411
[81]	Xiong J, Perersen A C, Cava R J and Ong N P 2012 Physica E 44 917
[82]	Bansal N, Kim Y S, Brahlek M, Edrey E and Oh S 2012 Phys. Rev. Lett. 109 116804
[83]	Zhang S X, McDonald R D, Shekhter A, Bi Z X, Li Y, Jia Q X and Picraux S T 2012 Appl. Phys. Lett. 101 202403
[84]	Assaf B A, Cardinal T, Wei P, Katmis F, Moodera J S and Heiman D 2013 Appl. Phys. Lett. 102 012102
[85]	Wang X L, Du Y, Dou S X and Zhang C 2012 Phys. Rev. Lett. 108 266806
[86]	Bergmann G 1984 Phys. Rep. 107 1
[87]	Ando T, Nakanishi T and Saito R 1998 J. Phys. Soc. Jpn. 67 2857
[88]	Li Y Q, Wu K H, Shi J R and Xie X C 2012 Front. Phys. 7 165
[89]	Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H and Li Y Q 2011 Phys. Rev. B 83 241304
[90]	Garate I and Glazman L 2012 Phys. Rev. B 86 035422
[91]	Kim D, Syers P, Butch N P and Fuhrer S 2013 Nat. Commun. 4 2040
[92]	Yu X X, He L, Lang M, Jiang W J, Xiu F, Liao Z, Wang Y, Kou X F, Zhang P, Tang J, Huang G, Zou J and Wang K L 2013 Nanotechnology 24 015705
[93]	Lin C J, He X Y, Liao J, Wang X X, Sacksteder IV V, Yang W M, Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai X, Wu K H and Li Y Q 2013 Phys. Rev. B 88 041307
[94]	Altshuler B L, Aronov A G and Spivak B Z 1981 JETP Lett. 33 94
[95]	Sharvin D Y and Sharvin Y V 1982 JETP Lett. 34 272
[96]	Bachtold A, Strunk C, Salvetat J P, Bonard J M, Forrö L, Nussbaumer T and Schönenberger C 1999 Nature 397 673
[97]	Bardarson J H, Brouwer P W and Moore J E 2010 Phys. Rev. Lett. 105 156803
[98]	Zhang Y and Vishwanath A 2010 Phys. Rev. Lett. 105 206601
[99]	Peng H L, Lai K J, Kong D, Meister S, Chen Y L, Qi X L, Zhang S C, Shen Z X and Cui Y 2010 Nat. Mater. 9 225
[100]	Li Z G, Qin Y Y, Song F Q, Wang Q H, Wang X F, Wang B G, Ding H F, Van Haesondonck C, Wan J G, Zhang Y H and Wang G H 2012 Appl. Phys. Lett. 100 083107
[101]	Tian M L, Ning W, Qu Z, Du H F, Wang J and Zhang Y H 2013 Sci. Rep. 3 1212
[102]	Sulaev A, Ren P, Xia B, Lin Q H, Yu T, Qiu C, Zhang S Y, Han M Y, Li Z P, Zhu W G, Wu Q Y, Feng Y P, Shen L, Shen S Q and Wang L 2013 AIP Advances 3 032123
[103]	Hong S S, Zhang Y, Cha J J, Qi X L and Cui Y 2013 arXiv: 1303.1601[cond-mat.mes-hall]
[104]	Brüne C, Liu C X and Shen Z X 2011 Phys. Rev. Lett. 106 126803
[105]	Dzero M, Sun K, Galitski V and Coleman P 2010 Phys. Rev. Lett. 104 106408
[106]	Wolgast S, Kurdak C, Sun K, Allen J W, Kim D J and Fisk Z 2012 arXiv: 1211.5104[cond-mat.str-el]
[107]	Zhang X H, Butch N P, Syers P and Paglione J 2013 Phys. Rev. X 3 011011
[108]	Lu F, Zhao J Z, Weng H M, Fang Z and Dai X 2013 Phys. Rev. Lett. 110 096401

[1]	Hall conductance of a non-Hermitian two-band system with k-dependent decay rates Junjie Wang(王俊杰), Fude Li(李福德), and Xuexi Yi(衣学喜). Chin. Phys. B, 2023, 32(2): 020305.
[2]	Weak localization in disordered spin-1 chiral fermions Shaopeng Miao(苗少鹏), Daifeng Tu(涂岱峰), and Jianhui Zhou(周建辉). Chin. Phys. B, 2023, 32(1): 017502.
[3]	High Chern number phase in topological insulator multilayer structures: A Dirac cone model study Yi-Xiang Wang(王义翔) and Fu-Xiang Li(李福祥). Chin. Phys. B, 2022, 31(9): 090501.
[4]	Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂ Feihao Pan(潘斐豪), Congkuan Tian(田丛宽), Jiale Huang(黄嘉乐), Daye Xu(徐大业), Jinchen Wang (汪晋辰), Peng Cheng(程鹏), Juanjuan Liu(刘娟娟), and Hongxia Zhang(张红霞). Chin. Phys. B, 2022, 31(5): 057502.
[5]	Steady-state and transient electronic transport properties of β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation Yan Liu(刘妍), Ping Wang(王平), Ting Yang(杨婷), Qian Wu(吴茜), Yintang Yang(杨银堂), and Zhiyong Zhang(张志勇). Chin. Phys. B, 2022, 31(11): 117305.
[6]	TiO₂/SnO₂ electron transport double layers with ultrathin SnO₂ for efficient planar perovskite solar cells Can Li(李灿), Hongyu Xu(徐宏宇), Chongyang Zhi(郅冲阳), Zhi Wan(万志), and Zhen Li(李祯). Chin. Phys. B, 2022, 31(11): 118802.
[7]	Ac Josephson effect in Corbino-geometry Josephson junctions constructed on Bi₂Te₃ surface Yunxiao Zhang(张云潇), Zhaozheng Lyu(吕昭征), Xiang Wang(王翔), Enna Zhuo(卓恩娜), Xiaopei Sun(孙晓培), Bing Li(李冰), Jie Shen(沈洁), Guangtong Liu(刘广同), Fanming Qu(屈凡明), and Li Lü(吕力). Chin. Phys. B, 2022, 31(10): 107402.
[8]	High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH₃NH₃PbI₃ Tao Wang(汪涛), Gui-Jiang Xiao(肖贵将), Ren Sun(孙韧), Lin-Bao Luo(罗林保), and Mao-Xiang Yi(易茂祥). Chin. Phys. B, 2022, 31(1): 018801.
[9]	Effects of post-annealing on crystalline and transport properties of Bi₂Te₃ thin films Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Chin. Phys. B, 2021, 30(6): 067307.
[10]	Quench dynamics in 1D model with 3rd-nearest-neighbor hoppings Shuai Yue(岳帅), Xiang-Fa Zhou(周祥发), and Zheng-Wei Zhou(周正威). Chin. Phys. B, 2021, 30(2): 026402.
[11]	Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ Yunlong Li(李云龙), Chaozhi Huang(黄超之), Guohua Wang(王国华), Jiayuan Hu(胡佳元), Shaofeng Duan(段绍峰), Chenhang Xu(徐晨航), Qi Lu(卢琦), Qiang Jing(景强), Wentao Zhang(张文涛), and Dong Qian(钱冬). Chin. Phys. B, 2021, 30(12): 127901.
[12]	Electric and thermal transport properties of topological insulator candidate LiMgBi Hao OuYang(欧阳豪), Qing-Xin Dong(董庆新), Yi-Fei Huang(黄奕飞), Jun-Sen Xiang(项俊森), Li-Bo Zhang(张黎博), Chen-Sheng Li(李晨圣), Pei-Jie Sun(孙培杰), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富). Chin. Phys. B, 2021, 30(12): 127101.
[13]	Electronic structures and topological properties of TeSe₂ monolayers Zhengyang Wan(万正阳), Hao Huan(郇昊), Hairui Bao(鲍海瑞), Xiaojuan Liu(刘晓娟), and Zhongqin Yang(杨中芹). Chin. Phys. B, 2021, 30(11): 117304.
[14]	Progress on 2D topological insulators and potential applications in electronic devices Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮). Chin. Phys. B, 2020, 29(9): 097304.
[15]	Perpendicular magnetization switching by large spin—orbit torques from sputtered Bi₂Te₃ Zhenyi Zheng(郑臻益), Yue Zhang(张悦), Daoqian Zhu(朱道乾), Kun Zhang(张昆), Xueqiang Feng(冯学强), Yu He(何宇), Lei Chen(陈磊), Zhizhong Zhang(张志仲), Dijun Liu(刘迪军), Youguang Zhang(张有光), Pedram Khalili Amiri, Weisheng Zhao(赵巍胜). Chin. Phys. B, 2020, 29(7): 078505.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Electrostatic field effects on three-dimensional topological insulators

Cite this article:

Online attention