Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (9): 097302    DOI: 10.1088/1674-1056/22/9/097302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
Zheng Liua, Zhang Fenga, Liu Sheng-Beia, Dong Lina, Liu Xing-Fanga, Fan Zhong-Chaob, Liu Bina, Yan Guo-Guoa, Wang Leia, Zhao Wan-Shuna, Sun Guo-Shenga, He Zhia, Yang Fu-Huab
a Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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