The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

doi:10.1088/1674-1056/22/8/088502

Abstract Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.

Keywords: memristor conductive mechanism dopant drift tunnel barrier

Received: 30 January 2013
Revised: 06 March 2013
Accepted manuscript online:

PACS:	85.35.-p	(Nanoelectronic devices)
	87.85.Qr	(Nanotechnologies-design)
	61.46.-w	(Structure of nanoscale materials)
	85.40.Bh	(Computer-aided design of microcircuits; layout and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

Corresponding Authors: Tian Xiao-Bo
E-mail: txiaobo1985@gmail.com

Cite this article:

Tian Xiao-Bo (田晓波), Xu Hui (徐晖), Li Qing-Jiang (李清江) The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier 2013 Chin. Phys. B 22 088502

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The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

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