Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

doi:10.1088/1674-1056/22/6/067304

Abstract Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi (111) bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi (111) ultrathin bilayers on topological insulator Bi₂Te₃ or Bi₂Se₃ substrates. In this review, we started from the growth mode of Bi (111) bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and first principles calculations.

Keywords: topological insulators edge states electronic structures Bi bilayer

Received: 20 April 2013
Accepted manuscript online:

PACS:	73.20.r
	74.25.Jb	(Electronic structure (photoemission, etc.))
	71.20.-b	(Electron density of states and band structure of crystalline solids)

Fund: Project supported by the National Basic Research Program of China (Grants Nos. 2012CB927401, 2011CB921902, 2013CB921902, and 2011CB922200), the National Natural Science Foundation of China (Grants Nos. 91021002, 11174199, 11134008, and 11274228), and SCSTC (Grant Nos. 11JC1405000, 11PJ1405200, and 12JC1405300).

Corresponding Authors: Gao Chun-Lei, Qian Dong
E-mail: clgao@sjtu.edu.cn; dqian@stju.edu.cn

Cite this article:

Gao Chun-Lei (高春雷), Qian Dong (钱冬), Liu Can-Hua (刘灿华), Jia Jin-Feng (贾金锋), Liu Feng (刘锋) Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111) 2013 Chin. Phys. B 22 067304

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Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

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