Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

doi:10.1088/1674-1056/22/7/077308

Abstract Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide (ITO)/bis(8-hydroxyquinoline) cadmium (Cdq₂)/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, which was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.

Keywords: resistive switching memory aggregation bis(8-hydroxyquinoline) cadmium

Received: 21 October 2012
Revised: 22 January 2013
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	73.61.Ph	(Polymers; organic compounds)
	85.65.+h	(Molecular electronic devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974074).

Corresponding Authors: Liu Su
E-mail: liusu@lzu.edu.cn

Cite this article:

Wang Ying (王颖), Yang Ting (杨汀), Xie Ji-Peng (谢吉鹏), Lü Wen-Li (吕文理), Fan Guo-Ying (范国莹), Liu Su (刘肃) Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application 2013 Chin. Phys. B 22 077308

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Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application

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