Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells

doi:10.1088/1674-1056/22/7/077305

Abstract The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in Al_xGa_1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the Al_xGa_1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Keywords: AlGaN/GaN quantum wells surface roughness scattering polarization fields mobility

Received: 16 January 2013
Revised: 27 February 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.21.Fg	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 11275228, 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Corresponding Authors: Yang Shao-Yan, Wang Jian-Xia
E-mail: sh-yyang@semi.ac.cn; jxwang2009@semi.ac.cn

Cite this article:

Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) Electron mobility limited by surface and interface roughness scatterings in Al_xGa_1-xN/GaN quantum wells 2013 Chin. Phys. B 22 077305

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Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells

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Electron mobility limited by surface and interface roughness scatterings in Al_xGa_1-xN/GaN quantum wells