Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

doi:10.1088/1674-1056/22/7/076804

Abstract Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination of xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Strong photoelectrical response makes it promising for optoelectronic applications.

Keywords: epitaxial graphene photoelectrical response oxygen absorption

Received: 18 February 2013
Revised: 27 February 2013
Accepted manuscript online:

PACS:	68.65.Pq	(Graphene films)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	78.67.Wj	(Optical properties of graphene)

Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0291), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041).

Corresponding Authors: Chen Yuan-Fu
E-mail: yfchen@uestc.edu.cn

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Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣) Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC 2013 Chin. Phys. B 22 076804

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
[3]	Pisana S, Lazzeri M, Casiraghi C, Novoselov K S, Geim A K, Ferrari A C and Mauri F 2007 Nature Mater. 6 198
[4]	Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J H, Kim P, Choi J Y and Hong B H 2009 Nature 457 706
[5]	Wang X, Zhi L J and Möulen K 2008 Nano Lett. 8 323
[6]	Bae S, Kim H, Lee Y B, Xu X F, Park J S, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y I, Kim Y J, Kim K S, Ozyilmaz B, Ahn J H, Hong B H and Iijima S 2010 Nature Nanotechnol. 5 574
[7]	Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen Xi F and Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese)
[8]	Shi Y, Fang W, Zhang K, Zhang W and Li L J 2009 Small 5 17
[9]	Kim M, Safron N S, Huang C, Arnold M S and Gopalan P 2012 Nano Lett. 12 182
[10]	Meric I, Han M Y, Young A F, Ozyilmaz B, Kim P and Shepard K L 2008 Nature Nanotechnol. 3 654
[11]	Zhou S Y, Gweon G H, Fedorov A V, First P N, de Heer W A, Lee D H, Guinea F, Castro Neto A H and Lanzara A 2007 Nature Mater. 6 770
[12]	Xu X D, Gabor N M, Alden J S, van der Zande A M and McEuen P L 2010 Nano Lett. 10 562
[13]	Song J C W, Rudner M S, Marcus C M and Levitov L S 2011 Nano Lett. 11 4688
[14]	Berger C, Song Z M, Li T B, Li X B, Ogbazghi A Y, Feng R, Dai Z T, Marchenkov A N, Conrad E H, First P N and de Heer W A 2004 J. Phys. Chem. B 108 19912
[15]	Emtsev K V, Bostwick A, Horn K, Jobst J, Kellogg G L, Ley L, McChesney J L, Ohta T, Reshanov S A, Rotenberg E, Schmid A K, Waldmann D, Weber H B and Seyller T 2009 Nature Mater. 8 203
[16]	Hao X, Chen Y F, Li P J, Wang Z G, Liu J B, He J R, Fan R, Sun J R, Zhang W L and Li Y R 2012 Chin. Phys. B 21 046801
[17]	Wang D C, Zhang Y M, Zhang Y M, Lei T M, Guo H, Wang Y H, Tang X Y and Wang H 2012 Chin. Phys. B 21 038102
[18]	Li X S, Cai W W, An J, Kim S, Nah J, Yang D X, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L and Ruoff R S 2009 Science 324 1312
[19]	Wang Z G, Chen Y F, Li P J, Hao X, Fu Y, Chen K, Huang L X and Liu D 2012 Vacuum 86 895
[20]	Emtsev K 2009 Electronic and Structural Characterizations of Unreconstructed SiC0001 Surfaces and the Growth of Graphene Overlayers (Ph. D. dissertation) (Erlangen: der Universität Erlangen-Nürnberg)
[21]	Briggs D and Seah M P 1994 Practical Surface Analysis: Auger and X-Ray Photoelectron Spectroscopy (Singapore: John Wiley & Sons Ltd) p.~357
[22]	Ostler M, Speck F, Gick M and Seyller T 2010 Phys. Status Solidi (b) 247 2924
[23]	Walter A L, Jeon K J, Bostwick A, Speck F, Ostler M, Seyller T, Moreschini L, Kim Y S, Chang Y J, Horn K and Rotenberg E 2011 Appl. Phys. Lett. 98 184102
[24]	Riedl C, Coletti C, Iwasaki T, Zakharov A A and Starke U 2009 Phys. Rev. Lett. 103 246804
[25]	Varchon F, Mallet P, Veuillen J Y and Magaud L 2008 Phys. Rev. B 77 235412
[26]	Bostwick A, Ohta T, Seyller T, Horn K and Rotenberg E 2007 Nature Phys. 3 36
[27]	Sidorov A N, Gaskill K, Nardelli M B, Tedesco J L, Myers-Ward R L, Jr. Eddy C R, Jayasekera T, Kim K W, Jayasingha R, Sherehiy A, Stallard R and Sumanasekera G U 2012 J. Appl. Phys. 111 113706
[28]	Moser J, Barreiro A and Bachtold A 2007 Appl. Phys. Lett. 91 163513
[29]	Schedin F, Geim A K, Morozov S V, Hill E W, Blake P, Katsnelson M I and Novoselov K S 2007 Nature Mater. 6 652
[30]	Fowler J D, Allen M J, Tung V C, Yang Y, Kaner R B and Weiller B H 2009 ACS Nano 3 301
[31]	Varchon F, Feng R, Hass J, Li X, Ngoc Nguyen B, Naud C, Mallet P, Veuillen J Y, Berger C, Conrad E H and Magaud L 2007 Phys. Rev. Lett. 99 126805
[32]	Riedl C and Starke U 2007 Phys. Rev. B 76 245406

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