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Chin. Phys. B, 2013, Vol. 22(7): 076803    DOI: 10.1088/1674-1056/22/7/076803
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东)
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China
Abstract  The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.
Keywords:  electroluminescence      quantum-confined Stark effect      InGaN/GaN quantum wells      laser diode  
Received:  02 March 2013      Revised:  29 March 2013      Accepted manuscript online: 
PACS:  68.65.Fg (Quantum wells)  
  61.72.uj (III-V and II-VI semiconductors)  
  42.55.Px (Semiconductor lasers; laser diodes)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 61076013 and 51272008), and the Beijing Municipal Science and Technology Project, China (Grant No. H030430020000).
Corresponding Authors:  Hu Xiao-Dong     E-mail:  huxd@pku.edu.cn

Cite this article: 

Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东) Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure 2013 Chin. Phys. B 22 076803

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