AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

doi:10.1088/1674-1056/22/6/068503

Abstract AlGaN/GaN high electron mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and the Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMT exhibits current-gain cutoff frequency (f_T) of 10 GHz and power gain cutoff frequency (f_max) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the characteristics of C-V are measured, and the gate interface characteristics of the AZO-gated devices are investigated by C-V dual sweep.

Keywords: AlGaN/GaN high electron mobility transistor Al-doped ZnO

Received: 21 September 2012
Revised: 05 December 2012
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))

Fund: Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. K50510250003 and K50510250006).

Corresponding Authors: Wang Chong
E-mail: wangchong197810@hotmail.com

Cite this article:

Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO 2013 Chin. Phys. B 22 068503

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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

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