Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/22/6/067104

Abstract Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance (here 4/5), and the polarization Coulomb field scattering is dominant for the sample with a small ratio (here 1/5). However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance (here 20 μm) compared with the one with a large distance (here 100 μm). This is due to the induced strain in the AlGaN layer caused by the drain bias.

Keywords: AlGaN/GaN heterostructures electron mobility drain bias electron scattering

Received: 31 July 2012
Revised: 08 November 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	77.22.Ch	(Permittivity (dielectric function))
	77.22.Ej	(Polarization and depolarization)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 10774090).

Corresponding Authors: Feng Zhi-Hong
E-mail: blueledviet@yahoo.com.cn

Cite this article:

Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪) Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors 2013 Chin. Phys. B 22 067104

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Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

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