Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (6): 067104    DOI: 10.1088/1674-1056/22/6/067104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors
Lü Yuan-Jiea b, Feng Zhi-Honga, Cai Shu-Juna, Dun Shao-Boa, Liu Boa, Yin Jia-Yuna, Zhang Xiong-Wena, Fang Yu-Longa, Lin Zhao-Junb, Meng Ling-Guob, Luan Chong-Biaob
a Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

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