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Chin. Phys. B, 2013, Vol. 22(6): 064217    DOI: 10.1088/1674-1056/22/6/064217
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

Zhao Bin (赵斌), Zhao Ming-Tao (赵明涛), Zhang Yan-Fei (张艳飞), Yang Jun-He (杨俊和)
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Abstract  The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5- heptanedionato) copper in supercritical CO2 (scCO2). The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration (0.75 mol/L).
Keywords:  supercritical CO2      Cu film      seed layer      Cu interconnects  
Received:  03 September 2012      Revised:  10 October 2012      Accepted manuscript online: 
PACS:  42.82.Ds (Interconnects, including holographic interconnects)  
  68.35.bd (Metals and alloys)  
  68.55.A- (Nucleation and growth)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50901086 and 51072118), the Shanghai Shuguang Project, China (Grant No. 09SG46), the Science Foundation for the Excellent Youth Scholars of Shanghai Municipal Education Commission, China (Grant No. slg10032), the Qianjiang Project of Zhejiang Province, China (Grant No. 2010R10047), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.
Corresponding Authors:  Zhao Bin, Yang Jun-He     E-mail:  zhaobin@usst.edu.cn; jhyang@usst.edu.cn

Cite this article: 

Zhao Bin (赵斌), Zhao Ming-Tao (赵明涛), Zhang Yan-Fei (张艳飞), Yang Jun-He (杨俊和) Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects 2013 Chin. Phys. B 22 064217

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