Molecular-beam epitaxy of topological insulator Bi2Se3 (111) and (221) thin films

doi:10.1088/1674-1056/22/6/068101

Abstract This paper presents an overview of growth of Bi₂Se₃, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between growth of Bi₂Se₃ (111) on van der Waals (vdW) and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi₂Se₃ on InP (001) and GaAs (001) substrates is also discussed.

Keywords: topological insulator molecular-beam epitaxy Bi₂Se₃ twin domain strain

Received: 02 April 2013
Accepted manuscript online:

PACS:	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	68.55.-a	(Thin film structure and morphology)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)

Fund: Project supported by the Research Grant Council (RGC) of Hong Kong Special Administrative Region for its financial support under the General Research Funds (Grant Nos. 706110 and 706111) and the SRFDP and RGCERG Joint Research Scheme sponsored by the RGC of Hong Kong and the Ministry of Education of China (M-HKU709/l2).

Corresponding Authors: Xie Mao-Hai
E-mail: mhxie@hku.hk

Cite this article:

Xie Mao-Hai (谢茂海), Guo Xin (郭欣), Xu Zhong-Jie (徐忠杰), Ho Wing-Kin (何永健) Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films 2013 Chin. Phys. B 22 068101

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Molecular-beam epitaxy of topological insulator Bi2Se3 (111) and (221) thin films

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Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films