Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

doi:10.1088/1674-1056/22/5/057202

Abstract A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B⁺, P⁺, and As⁺ ion implantation at doses ranging from 1×10¹¹ cm^-2 to 1×10¹⁶ cm^-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and lifetime extracted from the transient PCR signals.

Keywords: photocarrier radiometry ion implantation effective lifetime silicon

Received: 05 November 2012
Revised: 03 December 2012
Accepted manuscript online:

PACS:	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	78.55.Ap	(Elemental semiconductors)
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090).

Corresponding Authors: Li Bin-Cheng
E-mail: bcli@ioe.ac.cn

Cite this article:

Ren Sheng-Dong (任胜东), Li Bin-Cheng (李斌成), Gao Li-Feng (高丽峰), Wang Qian (王谦) Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers 2013 Chin. Phys. B 22 057202

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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

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