Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

doi:10.1088/1674-1056/22/5/058503

Abstract The characteristics of a blue light-emitting diode (LED) with an AlInN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AlInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AlGaN EBL or a AlGaN/ GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.

Keywords: AlInN/GaN superlattices efficiency droop numerical simulation

Received: 28 August 2012
Revised: 17 December 2012
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

Corresponding Authors: Fan Guang-Han
E-mail: gfan@scnu.edu.cn

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Zhao Fang (赵芳), Yao Guang-Rui (姚光锐), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Su Chen (苏晨), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer 2013 Chin. Phys. B 22 058503

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Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

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