Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

doi:10.1088/1674-1056/22/5/055204

Abstract A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si₃N₄ thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).

Keywords: plasma focus TiN/a-Si₃N₄ films X-ray diffraction

Received: 12 July 2012
Revised: 09 October 2012
Accepted manuscript online:

PACS:	52.59.Hq	(Dense plasma focus)
	52.77.Dq	(Plasma-based ion implantation and deposition)
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
	68.37.Ps	(Atomic force microscopy (AFM))

Fund: Project supported by the HEC, Pakistan.

Corresponding Authors: T. Hussain
E-mail: tousifhussain@gmail.com

Cite this article:

T. Hussain, R. Ahmad, N. Khalid, Z. A. Umar, A. Hussnain Synthesis of TiN/a-Si₃N₄ thin film by using a Mather type dense plasma focus system 2013 Chin. Phys. B 22 055204

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Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

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Synthesis of TiN/a-Si₃N₄ thin film by using a Mather type dense plasma focus system