Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/22/5/057304

Abstract V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si₃N₄ recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.

Keywords: high electron mobility transistors electric field distribution field plate current dispersion

Received: 17 September 2012
Revised: 27 November 2012
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant Nos. 61106106 and 61204085).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

Cite this article:

Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors 2013 Chin. Phys. B 22 057304

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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

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