Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (5): 056103    DOI: 10.1088/1674-1056/22/5/056103
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor
Sun Ya-Bina b, Fu Juna b, Xu Juna b, Wang Yu-Donga b, Zhou Weia b, Zhang Weia, Cui Jiea, Li Gao-Qinga, Liu Zhi-Honga b, Yu Yong-Taoc, Ma Ying-Qic, Feng Guo-Qiangc, Han Jian-Weic
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
b Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China;
c National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China

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