Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

doi:10.1088/1674-1056/22/3/038501

Abstract The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to the TFET device design, simulation, and fabrication.

Keywords: tunnel field-effect transistor band-to-band tunneling subthreshold swing gated P-I-N diode

Received: 08 May 2012
Revised: 15 August 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))

Fund: Project supported by the National Ministries and Commissions, China (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2010JQ8008).

Corresponding Authors: Li Yu-Chen
E-mail: yuchenlee09@gmail.com

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Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇) Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor 2013 Chin. Phys. B 22 038501

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Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

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