Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

doi:10.1088/1674-1056/22/3/037802

Abstract The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated by using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

Keywords: InGaAsBi strained quantum wells photoluminescence

Received: 21 August 2012
Revised: 26 November 2012
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	78.67.De	(Quantum wells)
	61.05.cp	(X-ray diffraction)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB619200), the National Natural Science Foundation of China (Grant Nos. 61275113, 61204133, and 60906047), the Innovative Founding of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and the Swedish Research Council.

Corresponding Authors: Zhang Yong-Gang
E-mail: ygzhang@mail.sim.ac.cn

Cite this article:

Gu Yi (顾溢), Zhang Yong-Gang (张永刚), Song Yu-Xin (宋禹忻), Ye Hong (叶虹), Cao Yuan-Ying (曹远迎), Li Ai-Zhen (李爱珍), Wang Shu-Min (王庶民) Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence 2013 Chin. Phys. B 22 037802

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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

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