Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(2): 026101    DOI: 10.1088/1674-1056/22/2/026101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Detection of Fe 3d electronic states in valence band and magnetic properties of Fe-doped ZnO film

Chen Tie-Xin (陈铁锌)a, Cao Liang (曹亮)a, Zhang Wang (张旺)a, Han Yu-Yan (韩玉岩)a, Zheng Zhi-Yuan (郑志远)a, Xu Fa-Qiang (徐法强)a, Ibrahim Kurash (奎热西)b, Qian Hai-Jie (钱海杰)b, Wang Jia-Ou (王嘉鸥 )b
a National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;
b Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Abstract  Fe-doped ZnO film has been grown by laser molecular beam epitaxy (L-MBE) and structurally characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), all of which reveal the high quality of the film. No secondary phase was detected. Resonant photoemission spectroscopy (RPES) with photon energies around the Fe 2p-3d absorption edge is performed to detect the electronic structure in the valence band. A strong resonant effect at a photon energy of 710 eV is observed. Fe3+ is the only valence state of Fe ions in the film and the Fe 3d electronic states are concentrated at binding energies of about 3.8 eV and 7 eV~ 8 eV. There are no electronic states related to Fe near the Fermi level. Magnetic measurements reveal a typical superparamagnetic property at room temperature. The absence of electronic states related to Fe near the Fermi level and the high quality of the film, with few defects, provide little support to ferromagnetism.
Keywords:  Fe-doped ZnO      laser molecular beam epitaxy      resonant photoemission spectroscopy      superparamagnetism  
Received:  09 May 2012      Revised:  22 August 2012      Accepted manuscript online: 
PACS:  61.05.cp (X-ray diffraction)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  73.61.Ga (II-VI semiconductors)  
  75.50.Pp (Magnetic semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10775126 and 10975138).
Corresponding Authors:  Xu Fa-Qiang     E-mail:  fqxu@ustc.edu.cn

Cite this article: 

Chen Tie-Xin (陈铁锌), Cao Liang (曹亮), Zhang Wang (张旺), Han Yu-Yan (韩玉岩), Zheng Zhi-Yuan (郑志远), Xu Fa-Qiang (徐法强), Ibrahim Kurash (奎热西), Qian Hai-Jie (钱海杰), Wang Jia-Ou (王嘉鸥 ) Detection of Fe 3d electronic states in valence band and magnetic properties of Fe-doped ZnO film 2013 Chin. Phys. B 22 026101

[1] Dash S P, Sharma S, Patel R S, de Jong M P and Jansen R 2009 Nature 462 491
[2] Prinz G A 1998 Science 282 1660
[3] Lou X H, Adelmann C, Crooker S A, Garlid E S, Zhang J, Reddy K S M, Flexner S D, Palmstrom C J and Crowell P A 2007 Nat. Phys. 3 197
[4] Ozgur U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[5] Ohno H 1998 Science 281 951
[6] Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[7] Sharma P, Gupta A, Rao K V, Owens F J, Sharma R, Ahuja R, Guillen J M O, Johansson B and Gehring G A 2003 Nat. Mater. 2 673
[8] Debernardia A and Fanciulli M 2007 Appl. Phys. Lett. 90 212510
[9] Ganguli N, Dasgupta I and Sanyal B 2009 Appl. Phys. Lett. 94 192503
[10] Jug K and Tikhomirov V A 2009 J. Phys. Chem. A 113 11651
[11] He Y, Sharma P, Biswas K, Liu E Z, Ohtsu N, Inoue A, Inada Y, Nomura M, Tse J S, Yin S and Jiang J Z 2008 Phys. Rev. B 78 155202
[12] Kaminski A and Das Sarma S 2002 Phys. Rev. Lett. 88 247202
[13] Durst Adam C, Bhatt R N and Wolff P A 2002 Phys. Rev. B 65 235205
[14] Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat. Mater. 4 173
[15] Peng H W, Xiang H J, Wei S H, Li S S, Xia J B and Li J B 2009 Phys. Rev. Lett. 102 017201
[16] Karmakar D, Mandal S K, Kadam R M, Paulose P L, Rajarajan A K, Nath T K, Das A K, Dasgupta I and Das G P 2007 Phys. Rev. B 75 144404
[17] Kaspar T C, Droubay T, Heald S M, Engelhard M H, Nachimuthu P and Chambers S A 2008 Phys. Rev. B 77 201303
[18] Jeyadevan B, Tohji K and Nakatsuka K 1994 J. Appl. Phys. 76 6325
[19] Kamata A, Noguchi K, Suzuki K, Tezuka H, Kashiwakura T, Ohno Y and Nakai S 1997 J. Phys. Soc. Jpn. 66 401
[20] Ozawa K, Oba Y, Edamoto K, Higashiguchi M, Miura Y, Tanaka K, Shimada K, Namatame H and Taniguchi M 2009 Phys. Rev. B 79 075314
[21] Kataoka T, Kobayashi M, Sakamoto Y, Song G S, Fujimori A, Chang F H, Lin H J, Huang D J, Chen C T, Ohkochi T, Takeda Y, Okane T, Saitoh Y, Yamagami H, Tanaka A, Mandal S K, Nath T K, Karmakar D and Dasgupta I 2010 J. Appl. Phys. 107 033718
[22] Leonov I, Yaresko A N, Antonov V N and Anisimov V I 2006 Phys. Rev. B 74 165117
[23] Martínez B, Sandiumenge F, Balcells L, Arbiol J, Sibieude F and Monty C 2005 Phys. Rev. B 72 165202
[24] Pan F, Guo Y, Cheng F F, Fa T and Yao S D 2011 Chin. Phys. B 20 127501
[25] Yao C W, Zeng Q S, Goya G F, Torres T, Liu J F, Wu H P, Ge M Y, Zeng Y W, Wang Y W and Jiang J Z 2007 J. Phys. Chem. C 111 12274
[1] Temperature dependence of surface and structure properties of ZnCdO film
Lei Hong-Wen (雷红文), Yan Da-Wei (阎大伟), Zhang Hong (张红), Wang Xue-Min (王雪敏), Yao Gang (姚刚), Wu Wei-Dong (吴卫东), Zhao Yan (赵妍). Chin. Phys. B, 2014, 23(12): 126104.
[2] Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy
Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生). Chin. Phys. B, 2012, 21(9): 097105.
[3] Effect of thickness on the microstructure of GaN films on Al2O3 (0001) by laser molecular beam epitaxy
Liu Ying-Ying(刘莹莹), Zhu Jun(朱俊), Luo Wen-Bo(罗文博), Hao Lan-Zhong(郝兰众), Zhang Ying(张鹰), and Li Yan-Rong(李言荣) . Chin. Phys. B, 2011, 20(10): 108102.
No Suggested Reading articles found!