Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(2): 027702    DOI: 10.1088/1674-1056/22/2/027702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃)
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  A comparative study of two kinds of oxidants (H2O and O3) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlOx) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied. The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlOx film. Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.
Keywords:  HfAlOx      atomic layer deposition      oxidants      annealing  
Received:  16 July 2012      Revised:  22 August 2012      Accepted manuscript online: 
PACS:  77.55.D-  
  82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).
Corresponding Authors:  Fan Ji-Bin     E-mail:  jbfan@mail.xidian.edu.cn

Cite this article: 

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃) Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition 2013 Chin. Phys. B 22 027702

[1] Davies D 2012 Electron. Lett. 48 192
[2] Armacost M, Augustin A, Felsner P, Feng Y, Friese G, Heidenreich J, Hueckel G, Prigge O and Stein K 2000 Tech. Dig. Int. Electron. Devices Meet. pp. 157-160
[3] Woo J C, Chun Y S, Joo Y H and Kim C I 2012 Appl. Phys. Lett. 100 081101
[4] The International Technology Roadmap for Semiconductors 2001 Semiconductor Industry Association
[5] Chen S B, Lai C H, Chin A, Hsieh J C and Liu J 2002 IEEE Electron. Dev. Lett. 23 185
[6] Lee B H, Oh J, Tseng H H, Jammy R and Huff H 2006 Materi. Today 9 32
[7] Packan P, Akbar S, Armstrong M, Brazier M, Deshpande H, Dev K, Ding G, Ghani T, Golonzka O, Han W, He J, Heussner R, James R, Jopling J, Kenyon C, Lee S H, Liu M, Lodha S, Mattis B, Murthy A, Neiberg L, Neirynck J, Pae S, Parker C, Pipes L, Sebastian J, Seiple J, Sell B, Sivakumar S, Song B, Amour A, Tone K, Troeger T, Weber C, Zhang K and Natarajan S 2009 Tech. Dig. Int. Electron. Devices Meet. p. 659
[8] Hu H, Zhu C, Lu Y F, Li M F, Cho B J and Choi W K 2002 IEEE Electron. Dev. Lett. 23 514
[9] Kar-Roy A, Hu C, Racaneli M, Compton C A, Kempf P, Jolly G, Sherman P N, Zheng J, Zhang Z and Yin A 1999 Proc. IITC pp. 245-247
[10] Liu Z T, Tan T T and Li Y Y 2011 Chin. Phys Lett. 28 086803
[11] Hota M K, Mahata C, Sarkar C K and Maiti C K 2009 ECS Trans. 25 201
[12] Yu X, Zhu C, Hu H, Chin A, Li M F, Cho B J, Kwong D L, Foo P D and Yu M B 2003 Mat. Res. Soc. Symp. Proc. 766
[13] Liu X Y, Ramanathan S, Longdergan A, Srivastava A, Lee E, Seidel T E, Barton J T, Pang D and Gordonb R G 2005 J. Electrochem. Soc. 152 213
[14] Rafí J M, Zabala M, Beldarrain O and Campabadal F 2010 ECS Trans. 28 213
[15] Kang C S, Cho H J, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
[16] Kim Y K, Ahn J R, Choi W H, Lee H S and Yeom H W 2003 Phys. Rev. B 68 075323
[17] Fan J B, Liu H X, Kuang Q W, Gao B, Ma F and Hao Y 2012 Microelectron. Reliab. 52 1043
[18] Fan J B, Liu H X, Gao B, Ma F, Zhuo Q Q and Hao Y 2012 Chin. Phys. B 21 087702
[1] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2] Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing
Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.
[3] Introducing voids around the interlayer of AlN by high temperature annealing
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Chin. Phys. B, 2022, 31(7): 076104.
[4] Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition
Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[5] Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.
[6] Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film
Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
[7] Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing
Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Chin. Phys. B, 2021, 30(9): 097302.
[8] In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing
Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). Chin. Phys. B, 2021, 30(8): 086109.
[9] Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Chin. Phys. B, 2021, 30(7): 077303.
[10] Fabrication and characterization of Al-Mn superconducting films for applications in TES bolometers
Qing Yu(余晴), Yi-Fei Zhang(张翼飞), Chang-Hao Zhao(赵昌昊), Kai-Yong He(何楷泳), Ru-Tian Huang(黄汝田), Yong-Cheng He(何永成), Xin-Yu Wu(吴歆宇), Jian-She Liu(刘建设), and Wei Chen(陈炜). Chin. Phys. B, 2021, 30(7): 077402.
[11] Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films
Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Chin. Phys. B, 2021, 30(6): 067307.
[12] Understanding the synergistic effect of mixed solvent annealing on perovskite film formation
Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Chin. Phys. B, 2021, 30(6): 068103.
[13] Characterization and application in XRF of HfO2-coated glass monocapillary based on atomic layer deposition
Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[14] Quantum annealing for semi-supervised learning
Yu-Lin Zheng(郑玉鳞), Wen Zhang(张文), Cheng Zhou(周诚), and Wei Geng(耿巍). Chin. Phys. B, 2021, 30(4): 040306.
[15] Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing
Limeng Zhang(张李萌), Jinbo Chen(陈锦波), Jierong Gu(顾杰荣), Yixiao Gao(高一骁), Xiang Shen(沈祥), Yimin Chen(陈益敏), and Tiefeng Xu(徐铁峰). Chin. Phys. B, 2021, 30(3): 034210.
No Suggested Reading articles found!