Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

doi:10.1088/1674-1056/22/2/027505

Abstract This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H-SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice. The Raman spectra reveale that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H-SiC are hardly varied. It is found that after V-doping process, the saturation magnetization (M_s) and the vacancy concentration of 6H-SiC are both increased. From these results, it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of M_s of V-doped 6H-SiC.

Keywords: 6H-SiC V-doping ferromagnetism vacancy concentration

Received: 07 June 2012
Revised: 13 August 2012
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	75.40.-s	(Critical-point effects, specific heats, short-range order)
	75.30.Fv	(Spin-density waves)

Fund: Project supported by the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10).

Corresponding Authors: Yan Cheng-Feng
E-mail: pabol2006@163.com

Cite this article:

Wang Hui (王辉), Yan Cheng-Feng (严成锋), Kong Hai-Kuan (孔海宽), Chen Jian-Jun (陈建军), Xin Jun (忻隽), Shi Er-Wei (施尔畏 ) Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder 2013 Chin. Phys. B 22 027505

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Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder

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