| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering |
| Huang Shi-Hua (黄仕华), Cheng Pei-Hong (程佩红), Chen Yong-Yue (陈勇跃) |
| Department of Physics, Zhejiang Normal University, Jinhua 321004, China |
|
|
|
|
Abstract The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated. The Ta2O5 partially transforms from amorphous phase into crystal phase when annealing temperatures are 800℃ or higher. The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio, which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process. For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃, the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1. Considering the presence of an SiO2 layer between the film and the silicon substrate, the optimal dielectric constant of Ta2O5 film was estimated to be 31. Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies, and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio. The leakage current decreases after annealing treatment and it is minimized at 700℃. However, when the annealing temperature is 800℃ or higher, it increases slightly, which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.
|
Received: 12 July 2012
Revised: 05 August 2012
Accepted manuscript online:
|
|
PACS:
|
77.55.+f
|
|
| |
84.37.+q
|
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
|
| |
68.35.D
|
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076055); the Program for Innovative Research Teams in Zhejiang Normal University, and the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (Grant No. FDS KL2011_04). |
Corresponding Authors:
Huang Shi-Hua
E-mail: huangshihua@zjnu.cn
|
Cite this article:
Huang Shi-Hua (黄仕华), Cheng Pei-Hong (程佩红), Chen Yong-Yue (陈勇跃) Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering 2013 Chin. Phys. B 22 027701
|
| [1] |
Wilk G D, Wallace R M and Antony J M 2001 J. Appl. Phys. 89 5243
|
| [2] |
Atanassova E and Dimitrova T 2001 Handbook of Surfaces and Interfaces of Materials, ed. Nalwa H S (San Diego: Academic Press)
|
| [3] |
Chaneliere C, Autran J L, Devine R A B and Balland B 1998 Mater. Sci. Eng. R-Rep. R 22 269
|
| [4] |
Chiu F C, Wang J J, Lee J Y M and Wu S C 1997 J. Appl. Phys. 81 6911
|
| [5] |
Atanassova E, Stojadinovic N, Paskaleva A, Spassov D, Vracar L and Georgieva M 2008 Semicond. Sci. Technol. 23 075017
|
| [6] |
Atanassova E, Paskaleva E, Novskovski N and Georgieva M 2005 J. Appl. Phys. 97 094104
|
| [7] |
Lau W S, Leong L L, Han T and Sandler N P 2003 Appl. Phys. Lett. 83 2835
|
| [8] |
Dueñas S, Castán E, Barbolla J, Kola R R and Sullivan P A 1999 J. Mater. Sci.: Mater. Electron. 10 379
|
| [9] |
Kwak J C, Lee Y H and Choi B H 2004 Appl. Surf. Sci. 230 249
|
| [10] |
Bi Z W, Feng Q, Hao Y, Wang D H, Ma X H, Zhang J C, Quan S and Xu S R 2010 Chin. Phys. B 19 077303
|
| [11] |
Zhang Z Y, Gao X Y, Feng H L, Ma J M and Lu J X 2011 Acta Phys. Sin. 60 016110 (in Chinese)
|
| [12] |
Xie J, Li B, Li Y J, Yan P, Feng L H, Cai Y P, Zheng J G, Zhang J Q, Li W, Wu L L, Lei Z and Zeng G G 2010 Acta Phys. Sin. 59 5749 (in Chinese)
|
| [13] |
Atanassova E, Kalitzova M, Zollo G, Paskaleva A, Peeva A, Georgieva M and Vitali G 2003 Thin Solid Films 426 191
|
| [14] |
Powder Diffraction File Card 25-0922. JCPDS: International Center for Diffraction Data, 1996, 1601 Park Lane, Swarthmore, PA 19081
|
| [15] |
Jehn H and Olzi E 1972 J. Less-Common Met. 27 297
|
| [16] |
Moon T H, Ham M H and Myoung J M 2005 Appl. Phys. Lett. 86 102903
|
| [17] |
Hong J H, Moon T H and Myoung J M 2004 Microelectron. Eng. 75 263
|
| [18] |
Grahn J V, Hellberg P E and Olsson E 1998 J. Appl. Phys. 84 1632
|
| [19] |
Ezhilvalavan S and Tseng T Y 1998 J. Appl. Phys. 83 4797
|
| [20] |
Atanassova E 1999 Microelectron. Reliab. 39 1185
|
| [21] |
Dimitrova T and Atanassova E 1998 Solid-State Electron. 42 307
|
| [22] |
Atanassova E and Dimitrova T 1998 Microelectron. Reliab. 38 833
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
