A simple and accurate method to measure program/erase speed in a memory capacitor structure

doi:10.1088/1674-1056/22/1/018501

Abstract With the merits of simple process and short fabrication period, the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices. However, the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed. In this paper, illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved. From the dependence of the inversion capacitance on frequency, a time constant is extracted to quantitatively characterize the formation of the inversion layer. Experimental results show that under a high enough illumination, this time constant is greatly reduced and the measured minority carrier related program/erase speed is in agreement with the reported value in a transistor structure.

Keywords: memory capacitor program/erase speed minority carrier generation illumination

Received: 15 April 2012
Revised: 21 June 2012
Accepted manuscript online:

PACS:

85.30.-z

(Semiconductor devices)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934200 and 2011CBA00600), the National Natural Science Foundation of China (Grant Nos. 7360825403, 61176080, and 61176073), and the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005).

Corresponding Authors: Liu Ming
E-mail: liuming@ime.ac.cn

Cite this article:

Jin Lin (金林), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Wang Yong (王永), Yu Zhao-An (余兆安), Jiang Dan-Dan (姜丹丹), Chen Jun-Ning (陈军宁), Liu Ming (刘明) A simple and accurate method to measure program/erase speed in a memory capacitor structure 2013 Chin. Phys. B 22 018501

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A simple and accurate method to measure program/erase speed in a memory capacitor structure

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