The influence of SixNy interlayer on GaN film grown on Si(111) substrate

doi:10.1088/1674-1056/21/12/128101

Abstract A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method, the Si_xN_y interlayer which is deposited on an AlN buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is grown on an Si(111) substrate successfully. Synthesized GaN epilayer is characterized by X-ray diffraction (XRD), atomic force microscope (AFM), and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the <0001> crystal orientation and the full width at half maximum of the X-ray diffraction curve in the (0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an Si_xN_y interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the Si_xN_y interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing Si_xN_y interlayer.

Keywords: Si_xN_y interlayer silicon substrate GaN film Raman scattering

Received: 01 April 2012
Revised: 08 May 2012
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60806017), the Science and Technology Program of Shenzhen, China (Grant No. JC201005280455A ), the Shenzhen University Research and Development Program, China (Grant No. 201128), and the Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, China (Grant No. 201208).

Corresponding Authors: Peng Dong-Sheng
E-mail: pengdongsheng@163.com

Cite this article:

Peng Dong-Sheng (彭冬生), Chen Zhi-Gang (陈志刚), Tan Cong-Cong (谭聪聪) The influence of Si_xN_y interlayer on GaN film grown on Si(111) substrate 2012 Chin. Phys. B 21 128101

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The influence of SixNy interlayer on GaN film grown on Si(111) substrate

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The influence of Si_xN_y interlayer on GaN film grown on Si(111) substrate