Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

doi:10.1088/1674-1056/21/12/127201

Abstract In order to investigate their electrical characteristics, high-voltage light-emitting-diodes (HV-LEDs) each containing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors (IFs) of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined. The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of failure cell is 76.8 Ω, while that of normal cell is 21.3 Ω. The scanning electron microscope (SEM) image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LED needs to be optimized.

Keywords: high-voltage light-emitting diode electrical characteristics ideality factor series resistance

Received: 30 March 2012
Revised: 09 May 2012
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Cg	(Contact resistance, contact potential)
	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11002013201102) and the National Key Technology R & D Program of China (Grant No. 2011BAE01B14).

Corresponding Authors: Guo Wei-Ling
E-mail: guoweiling@bjut.edu.cn

Cite this article:

Guo Wei-Ling (郭伟玲), Yan Wei-Wei (闫薇薇), Zhu Yan-Xu (朱彦旭), Liu Jian-Peng (刘建朋), Ding Yan (丁艳), Cui De-Sheng (崔德胜), Wu Guo-Qing (吴国庆) Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes 2012 Chin. Phys. B 21 127201

[1]	Feng W F, He Y Z and Shi F G 2010 Proc. 60th ECTC, June 1-4, Las Vegas, NV, USA, pp. 512-514
[2]	Huang X H, Liu J P, Fan Y M, Fan Y M, Kong J J, Yang H and Wang H B 2012 Chin. Phys. B 21 037105
[3]	Lu H M and Chen G X 2011 Chin. Phys. B 20 037807
[4]	Wang C H, Lin D W, Lee C Y, Tsai M A, Chen W H, Kuo H T, Hsu W H, Kuo H C, Lu T C, Wang S C and Chi G C 2011 Electron. Dev. Lett. 32 1098
[5]	Schubert E F 2006 Light-emitting Diode 2nd edn. (New York: Cambridge) pp. 63-66
[6]	Shah J M, Li Y L, Gessmann T and Schubert E F 2003 J. Appl. Phys. 94 2627
[7]	Park J J, Kang T W and Woo D Y, et al. 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4-7, 2011, Incheon, Korea, pp. 1-4
[8]	Sah C T, Noyce R N and Shockley W 1957 Proc. IRE September, 1957, pp. 1228-1243
[9]	Li J, Fan G H, Yang H and Yao G R 2008 Chin. J. Quantum Electron. 25 615
[10]	Marcel H, Maria K, Gernot E, Christaf M, Volker C, Juergen A S, Antonis K, Nikos T P, Mircea M and Elias A 2009 ACS Appl. Mater. & Interfaces 1 1451
[11]	Kim D W, Sung Y J, Park J W and Yeom G Y 2011 Thin Solid Films 398-399 87

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Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

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