Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition

doi:10.1088/1674-1056/21/12/126804

Abstract In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers. The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600℃ and 1000℃, respectively. It is observed that the thickness of LT-AlN layer influences the quality of GaN thin film extremely, and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Keywords: GaN AlN buffer layer metal-organic chemical vapour deposition threading dislocations

Received: 25 April 2012
Revised: 27 May 2012
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Corresponding Authors: Zhang Jin-Cheng
E-mail: jchzhang@xidian.edu.cn

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Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃) Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition 2012 Chin. Phys. B 21 126804

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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition

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