Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (11): 115203    DOI: 10.1088/1674-1056/21/11/115203
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Current Issue| Next Issue| Archive| Adv Search |
Nano-scale gap filling and mechanism of deposit–etch–deposit process for phase-change material
Ren Wan-Chuna b c, Liu Boa, Song Zhi-Tanga, Xiang Yang-Huib, Wang Zong-Taob, Zhang Bei-Chaob, Feng Song-Lina
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Semiconductor Manufacturing International Corporation, Shanghai 201203, China;
c Graduate School of the Chinese Academy of Sciences, Beijing 100049, China

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